TP0610K-T1-E3 Allicdata Electronics

TP0610K-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

TP0610K-T1-E3TR-ND

Manufacturer Part#:

TP0610K-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 185MA SOT23-3
More Detail: P-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: TP0610K-T1-E3 datasheetTP0610K-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors have been used in electronics since the early 20th century, and are used in a variety of applications. A FET (Field Effect Transistor) is a type of transistor used for switching or amplifying electrical signals. One such FET is the TP0610K-T1-E3, which has a variety of uses and unique features that can be beneficial for different applications.

Overview of TP0610K-T1-E3

The TP0610K-T1-E3 is an N-Channel Enhancement Mode MOSFET designed and developed by Vishay Intertechnology. It is available in a TO-220AB1package and is designed to operate with a wide range of temperatures and voltages. This makes it an ideal choice for use in a variety of application fields.

Application Fields of TP0610K-T1-E3

The TP0610K-T1-E3 can be used in many different applications. It can be used as a switch in motor controllers and power supplies, as a switching element in amplifiers, in power MOSFETs, and in power management circuits. This transistor can also be used for high voltage applications, making it suitable for use in solar cells and battery chargers.

The TP0610K-T1-E3 can be used in inverter circuits and AC-DC converters to ensure reliable power delivery. It can be used as a switching device in different circuits for switching loads between different voltages and amplifying signals. It can also be used in high power battery chargers, and other charging systems. Furthermore, its high temperature and voltage ratings makes it suitable for use in high temperature environments.

Working Principles of TP0610K-T1-E3

The TP0610K-T1-E3 is an N-Channel Enhancement Mode MOSFET. The working principle of this type of transistor is based on the \'Depletion Mode\' and the \'Enhancement Mode\'.

In Depletion Mode, the MOSFET regulates the current flowing between its two terminals. The flow of current is regulated by a Depletion capacitance. This capacitance decreases when the voltage applied to the gates is increased. This increases the current flow between the two terminals. On the other hand, when the voltage applied to the gates decreases, the Depletion capacitance increases, reducing the current flow.

In Enhancement Mode, the MOSFET works in the opposite way. When the voltage applied to the gates increases, the Depletion capacitance increases, increasing the current flow between the two terminals. And when the voltage applied to the gates decreases, the Depletion capacitance decreases, reducing the current flow.

The TP0610K-T1-E3 is a combination of the Depletion Mode and the Enhancement Mode. It is a bidirectional device, and it can be used for both switching and amplifying signals. It can also be used as a power MOSFET for high power applications.

Conclusion

The TP0610K-T1-E3 is a versatile transistor with a wide range of applications. It is available in a TO-220AB1 package, meaning it can be used in high temperature and high voltage applications. Its Depletion and Enhancement Modes of operation make it suitable for both switching and amplifying signals. It is an ideal choice for switching loads between different voltages and amplifying signals, and it can also be used as a power MOSFET in high power battery chargers and other charging systems.

The specific data is subject to PDF, and the above content is for reference

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