TP0610T-G Discrete Semiconductor Products |
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Allicdata Part #: | TP0610T-GTR-ND |
Manufacturer Part#: |
TP0610T-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 60V 0.12A SOT23-3 |
More Detail: | P-Channel 60V 120mA (Tj) 360mW (Ta) Surface Mount ... |
DataSheet: | TP0610T-G Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120mA (Tj) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TP0610T-G is a type of Field-Effect Transistor (FET) containing the properties of both a MOSFET and a Junction Field-Effect Transistor (JFET). It is a single-gate type of FET, meaning that it contains only one electrically operable terminal which is utilized during operation. This type of transistor is frequently used in applications due to its strong current driving capability and its high switching speed.
What is a Field-Effect Transistor (FET)?
A Field-Effect Transistor (FET) is an electron device which utilizes a voltage signal to change its electrical characteristics. It is composed of a semiconductor body of either silicon or gallium arsenide, containing one or more layers of the opposite conductivity type in the body. This type of transistor typically relies on an applied voltage to create what is known as the transistor’s “gate”, which controls electric conduction by allowing a certain amount of current to flow between the source and drain windows.
Working principle of the TP0610T-G
The TP0610T-G operates on the principle of an electron channel created by the inversion layer. This inversion layer is utilized to create a conductive path between the source and drain of the FET, leading to current flow when the voltage signal is applied to the gate window. The level of conductance is determined by the amount of voltage applied, as it serves to control the electric field created by the gate window, ultimately affecting its ability to drive a strong current.
Aside from this, the TP0610T-G\'s design also has the advantage of possessing fast switching speeds, allowing it to quickly respond to control signals. The reason for this lies in the transistor\'s structure, which features a minimized capacitance effect, resulting in reduced wiring lengths. This is beneficial for applications that require quick response to control signals, such as digital circuits and other similar devices.
Applications of the TP0610T-G
Due to the features mentioned above, the TP0610T-G has a wide range of applications that are suitable for various types of devices. It is commonly used in high-power amplifiers, power supplies, and motor control systems. It is also used in amplifying signals in radio frequency circuits, such as those used to drive transistor radios. In addition, it is also employed in robotic applications, as its minimal capacitance effect allows for fast response to control signals.
It can also be used in high-precision instrumentation, such as measuring and analyzing circuits, as well as in medical equipment, where high accuracy and speed are required. The TP0610T-G is also often utilized in computer and memory circuits, as its fast switching speeds and capacitance features enable the circuit to process data quickly.
Conclusion
In summary, the TP0610T-G is a field-effect transistor that contains both the properties of a MOSFET and a JFET. It is a single-gate type of FET, meaning that it has only one gate terminal which is utilized in operation. Its main advantages are its strong current driving capability, minimal capacitance effect, and fast switching speed, characteristics which make it suitable for applications such as high-power amplifiers, measuring and analyzing circuits, robotic equipment and motors, radio frequency amplifiers, computer and memory circuits, and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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