TP0610KL-TR1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | TP0610KL-TR1-E3TR-ND |
Manufacturer Part#: |
TP0610KL-TR1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 270MA TO92-3 |
More Detail: | P-Channel 60V 270mA (Ta) 800mW (Ta) Through Hole T... |
DataSheet: | TP0610KL-TR1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-226AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 15V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TP0610KL-TR1-E3 is a single N-Channel MOSFET from STMicroelectronics. A metal-oxide-semiconductor field-effect transistor (MOSFET), this device is designed with a robust structure and a high voltage rating, which makes it suitable for a range of applications. In this article, we’ll discuss the application field and working principle of the TP0610KL-TR1-E3.
The TP0610KL-TR1-E3 is a high-voltage, VDSS rating of 600 V and currents up to 4.5 A, N-Channel MOSFET. It is suitable for applications such as Load Switching, Solenoid, Motor Driving, Inverters, AC-DC conversion, etc. The on-state resistance is low, which makes it ideal for applications requiring higher efficiency. It also has low gate charge, which results in low switching losses. In addition to these features, the package has also been designed for high power density and robustness.
The working principle of the TP0610KL-TR1-E3 involves the usage of the MOSFET, which works much like a voltage-controlled switch. The MOSFET is a 4-terminal device that uses three terminals for controlling current flow and one terminal for controlling voltage. The voltage at the base terminal controls the amount of current that flows through the drain-source. When the gate voltage is increased above a certain threshold, the device is turned on and current flows, otherwise, it is turned off and no current flows. The drain-source voltage can be used to determine the threshold voltage required to turn on the device. The drain-source current depends exponentially on the gate-source voltage, which is a called the transfer characteristics of the MOSFET.
The TP0610KL-TR1-E3 has many advantages over other types of MOSFETs. It is designed for high voltage applications, and its low on-state resistance makes it ideal for higher efficiency applications. It also has a low gate charge, which results in low switching losses. In addition, its package has also been designed for high power density and robustness.
In conclusion, the TP0610KL-TR1-E3 is a single N-Channel MOSFET from STMicroelectronics and it is suitable for applications such as Load Switching, Solenoid, Motor Driving, Inverters, AC-DC conversion, etc. It has many benefits such as high voltage rating, high-efficiency operation, low on-state resistance, and low switching losses. It is designed for high power density and robustness and its working principle involves the use of MOSFET to control current flow.
The specific data is subject to PDF, and the above content is for reference
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