UP0497900L Discrete Semiconductor Products |
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Allicdata Part #: | UP0497900LTR-ND |
Manufacturer Part#: |
UP0497900L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N/P-CH 50V/30V SSMINI-6P |
More Detail: | Mosfet Array N and P-Channel 50V, 30V 100mA 125mW ... |
DataSheet: | UP0497900L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V, 30V |
Current - Continuous Drain (Id) @ 25°C: | 100mA |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 125mW |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SSMINI6-F1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UP0497900L is a modern field effect transistor (FET) array, a semiconductor device used for amplifying and switching electrical signals. It contains several transistors—typically MOSFETs—in one package, and can be used to construct large, complex analog and digital circuits with a minimal number of components. FET arrays have become essential devices in the modern digital and analog systems since they provide an efficient, reliable way of achieving circuit functionality, with a low power consumption and minimal physical footprint.
The UP0497900L specifically is a MOSFET array composed of eight 4-terminal independent FETs. It is designed for operation in the range 1 to 10 kilohertz, with a direct current (DC) resistance of 8.3 ohms and a frequency range of 100 kHz to 500 kHz. Additionally, it offers a low input capacitance of 20 pF per transistor, and a wide temperature range (from -55°C to 125°C). The device is provided in a small 8-pin package, making it perfect for use in portable and space-constrained applications.
By working together, the FETs in the array form an integrated architecture, allowing for the design of large and complex circuits with a minimum number of components. FET arrays can be used to achieve a variety of functions, such as complex switching pathways, precise voltage divide networks, regulated power supplies, and high-speed data processing. Additionally, FET arrays can also be used in different types of feedback circuits, including low- and high-pass filters, phase-shift and linear oscillators, and frequency combiners.
The working principle of the UP0497900L involves applying an input voltage at the gate of each FET, which then modulates the current passing through its source and drain. This modulation occurs when the voltage difference between the gate and the source is above the threshold voltage (Vth) of the FET; when the voltage is below Vth, the FET becomes “off” and no current flows through it. When the voltage is on the rising edge of the input voltage, the device enters a regime known as “soft saturation”, in which the current is constant even if the gate and source voltages are changing. This minimizes the power consumption and reduces distortion in the circuit.
The UP0497900L is a versatile device, with applications ranging from consumer electronics to industrial control systems. In consumer electronics, it can be used in television sets, fans and air conditioners, and in switching regulator designs. In industrial control systems, it can be used in DC motor controllers, temperature and humidity regulators, motor speed control units, and load sharing circuits. The device is also widely used in high-power RF transmitters, for example for telemetry systems, which require a high degree of voltage and current gain.
In summary, the UP0497900L is a modern 8-pin, MOSFET array designed for low-power applications. The device works by controlling the current flow between the source and the drain of the transistor with the input voltage applied at the gate. Its wide temperature range and low capacitance per transistor make it versatile enough for use in a range of consumer electronic, industrial control and high-power RF transmitter applications.
The specific data is subject to PDF, and the above content is for reference
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