UPA800T-A Allicdata Electronics
Allicdata Part #:

UPA800T-A-ND

Manufacturer Part#:

UPA800T-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF DUAL TRANSISTORS NPN SOT-363
More Detail: RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Sur...
DataSheet: UPA800T-A datasheetUPA800T-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: UPA800
Description

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The UPA800T-A is a high-speed bipolar transistor developed by Toshiba for use in a range of electronic applications. It operates as an amplifier for both high-frequency and low-frequency signals. It is well suited for use in radio frequency (RF) applications, such as RF receiver mixers, power amplifiers, switched amplifiers, and wide dynamic range amplifiers.

The UPA800T-A transistor has the following features: very low input and output capacitance, high gain and power output, low on-state resistance, and high frequency response. It is also capable of high operational speeds of up to 5GHz.

The UPA800T-A application field mainly involves RF equipment, mobile communication, and microwave circuits. It is widely used in wireless communication systems such as base stations, repeaters, and wireless LANs. It is also commonly used in microwave ovens and other consumer electronics.

The working principle of the UPA800T-A transistor is based on the bipolar junction, which has two pn-junction diodes joined together with the base-collector junction forming the active portion of the device. When voltage is applied to the base electrode of the transistor, current flows between the collector and emitter terminals. This current flow is controlled by the amount of voltage applied to the base. This is known as amplification, and it is the fundamental principle of operation for all electronic devices.

The UPA800T-A transistor provides a high gain, fast switching speed and is highly efficient. The transistor has a high-quality construction and is very reliable. It has a wide range of input and output capacitance, which makes it highly suitable for a range of RF applications.

In conclusion, the Toshiba UPA800T-A is a high-speed bipolar transistor that is well suited for use in radio frequency (RF) applications. It has a number of features, such as very low input and output capacitance, high gain and power output, and low on-state resistance. It operates as an amplifier for both high-frequency and low-frequency signals, and is highly reliable and efficient.

The specific data is subject to PDF, and the above content is for reference

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