UPA800T-T1 Allicdata Electronics

UPA800T-T1 Discrete Semiconductor Products

Allicdata Part #:

UPA800TTR-ND

Manufacturer Part#:

UPA800T-T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANS NPN HF FT=8GHZ SOT-363
More Detail: RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Sur...
DataSheet: UPA800T-T1 datasheetUPA800T-T1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO
Base Part Number: UPA800
Description

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UPA 800T-T1 transistors are considered as part of the RF transistors that are used for radio frequency applications. It is a bipolar junction transistor (BJT) and is commonly used in several different applications such as frequency conversion, radio receivers, microwave amplifiers, and many more. The UPA 800T-T1 has an active component made of two P-N junction layers, one N collector and one P-emitter, in which the current flows. It offers high-frequency operation and operates with high gain, linearity, and efficiency. It has an extremely fast switching time and a high current capacity in a small package. The UPA 800T-T1 is capable of producing stable operation over wide gains and frequencies, even at temperature extremes.

The UPA 800T-T1 is an NPN type transistor, so current flows from collector to emitter. It can be used in both amplifying and switching circuits. The base region is the controlling junction between the N-collector and P–emitter region, which determine the current flow of the transistor. The voltage applied to the base region controls the current flowing through the transistor. When a small amount of current is applied to the base region, the base region conducts and allows the current to flow from collector to emitter without any voltage applied, which results in amplification. On the other hand, when a high voltage is applied to the base region, it will open up, prohibiting current from flowing from collector to emitter. This is known as switching, which is the other way of using transistors.

The UPA 800T-T1 has several distinctive features such as high gain, fast switching time, low power dissipation, and high current handling capabilities. It also has a high noise figure which makes it suitable for RF applications. It has a wide operating temperature range which means that it is capable of maintaining its performance even at extreme temperatures. It is also designed to be compatible with most circuits and can be easily incorporated into existing systems. The UPA 800T-T1 is also known to be very reliable, offering a long lifetime. It is often used in power amplifiers and other high-power applications.

The UPA 800T-T1 is manufactured using a special process that enhances its many features and makes it suitable for use in a wide variety of applications. It is also designed to offer excellent reliability and long lifetime, which makes it ideal for power amplifier and other high-power applications. The UPA 800T-T1 also features low power consumption, high gain, and stable operation over temperatures. Overall, the UPA 800T-T1 is a great choice for RF applications and offers excellent performance for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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