UPA802T-A

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UPA802T-A is a type of transistor for industrial, scientific, and medical (ISM) application, mainly focused on RF applications. It is a bipolar junction transistor (BJT) specifically designed for RF usage. It has a wide operating frequency range, along with high level of gain, and suitable for high DC current or high power events. This transistor’s full lattice-matched construction makes it perfect for various analogue and digital radio frequency applications.

The UPA802T-A transistor is a NPN, planar silicon bipolar transistor. Its structure allows it to deliver high performance along with superior linearity. It is specifically designed to control and modulate RF power in the range between 4.2GHz to 8.5GHz. Its high RF output power and wide dynamic frequency range makes is suitable for networking, military and aerospace wireless communication applications.

UPA802T-A is a high power transistor that offers good gain with maximum power of 3.5Watt. Its sine-wave dissipation is two times its peak dissipation, with maximum junction temperature reachable up to 175 degrees. When up to nominal conditions it can reach a wide range of gain from 11db over its entire dynamic range. Its combinations offer high level of stability and high level integrity, making it suitable for high power and high bandwidth systems.

The UPA802T-A transistor works in a very simple way. It has two basic inputs, the base and the collector, which determine its action. When a voltage is applied to the base, current flows through the transistor\'s collector and exits the emitter. This current flow amplifies the applied voltage, resulting in a higher output voltage. This amplified voltage is then used to power a variety of electrical devices.

The UPA802T-A transistor is widely used in various industrial, military, and aerospace applications. Many of these devices are designed to run at high frequencies with little energy loss. As a result, these transistors have specific capabilities and features which enable them to function as required. For example, they can handle extreme temperatures and have increased durability in order to survive the harsh conditions they are often exposed to.

In addition, the UPA802T-A transistor’s performance level is enhanced by its low device parameters, such as its wide dynamic frequency range and low noise figure. This helps ensure its use for high frequency and high power applications. It also maintains a good linearity in operations and offers a good gain/power figure for better performance.

Overall, the UPA802T-A is an excellent transistor for most RF applications. With its high power output and wide dynamic frequency range, UPA802T-A is a great choice for applications that require high performance reliability. Its unique, full lattice-matched construction makes it ideal for both analog and digital radio frequency applications.

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