UPA811T-T1-A Allicdata Electronics
Allicdata Part #:

UPA811T-T1-A-ND

Manufacturer Part#:

UPA811T-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF DUAL TRANSISTORS NPN SOT-363
More Detail: RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Sur...
DataSheet: UPA811T-T1-A datasheetUPA811T-T1-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The UPA811T-T1-A is a RF bipolar transistor designed for use in radio frequency (RF) applications such as high frequency amplifiers. This type of transistor has a variety of features designed to provide excellent noise figure, linearity and gain, as well as better power handling and efficiency when compared to other devices. It is available in a variety of packages and is suitable for use in applications such as narrow-band and wide-band radio transmitters, WLAN transceivers, microwave ovens, and RF power amplifiers.

Features

The UPA811T-T1-A is a silicon N-channel device. It has a maximum collector-emitter voltage of 12 volts, a maximum collector current of 2 amperes, and a power dissipation of up to 60 watts. Due to its high gain and low noise characteristics, it performs exceptionally well in narrow-band applications. The device also has a maximum frequency of 6GHz, making it suitable for a variety of high-speed applications. The UPA811T-T1-A is available in a plastic SMT package with a two-lead construction.

Working Principle

The UPA811T-T1-A is a bipolar junction transistor, meaning that its operation is based on the sharing of electrons between a base and two other semiconductor layers. This sharing of electrons creates a potential difference that is used to amplify signals. The device is primarily used to amplify radio frequency signals, and is characterized by its high gain and low noise performance.

The transistor operates by using two electrical input signals applied to the base and collector to control the current flowing between the emitter and collector. A small amount of current from the base spreads throughout the transistor, allowing a much larger current to flow from the collector to the emitter. This current can be used to amplify an input signal, allowing for higher gain and better power handling capabilities. The overall operation of a bipolar transistor is fairly simple, but its wide range of applications show its often underestimated power.

Application Field

The UPA811T-T1-A is suitable for a variety of applications, including WLAN radios, amplifiers, and microwave ovens. It is well-suited for use in narrow-band and wide-band radio transmitters as its ability to operate over a wide frequency range. Due to its high linearity, gain and noise performance, it finds application in microwave ovens and WLAN radios. It can also be used in RF power amplifiers to provide high gain and excellent power handling capabilities.

The UPA811T-T1-A is an ideal choice for applications where high gain, low noise and linearity are key factors. Due to its high power handling capabilities and wide frequency range, it is suitable for a variety of radio frequency applications, making it a reliable choice for any engineer or designer.

The specific data is subject to PDF, and the above content is for reference

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