UPA801T-T1-A Discrete Semiconductor Products |
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Allicdata Part #: | UPA801T-T1-ATR-ND |
Manufacturer Part#: |
UPA801T-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF DUAL TRANSISTORS NPN SOT-363 |
More Detail: | RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW ... |
DataSheet: | UPA801T-T1-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 4.5GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 1GHz |
Gain: | 9dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | UPA801 |
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UPA801T-T1-A Application Field and Working Principle
The UPA801T-T1-A, also known as a RF bipolar transistor, is a small signal NPN transistor with a high gain and wide bandwidth. It is designed for RF amplifier and switching applications and is ideal for use in mobile telecommunication, broadband signal initiation, signal boosting, low voltage applications and data-intense applications. This transistor has been specifically designed to meet the demanding requirements of today\'s wireless communication.
The UPA801T-T1-A is a single-stage NPN transistor with a maximum collector current of 40 mA and a maximum collector-emitter voltage of -60 V. It has a small signal current gain of 100MHz, making it suitable for high frequency applications. Its maximum frequency of fT is 5 GHz, making it ideal for use in RF amplifying and switching applications.
The UPA801T-T1-A uses a bipolar junction transistor to amplify and switch electronic signals. A bipolar junction transistor is a three-terminal device; the two terminals called the base and the collector are used for input signals to control the output of the transistor, which is at the third terminal, the emitter. This means that the base and collector can control the current running through the transistor. When the base and collector are both powered, the transistor is in an “on” state, allowing the current to flow through it and amplify the signal. When the base and collector are both powered off, the transistor is in an “off” state, preventing the current from flowing.
The UPA801T-T1-A is a high-performance transistor with a wide range of applications in RF amplifier and switching systems. It is ideal for use in mobile communication systems, broadband signal tapping, signal boosting, low voltage applications and data-intense applications. This transistor is also suitable for use in high gain and high frequency applications, making it ideal for use in high frequency amplifying and switching systems.
In conclusion, the UPA801T-T1-A is a high-performance RF bipolar transistor. It is designed for RF amplifying and switching applications and is ideal for use in mobile telecommunication, broadband signal tapping, signal boosting, low voltage applications and data-intense applications. The UPA801T-T1-A is also suitable for use in high frequency amplifying and switching systems due to its high gain and wide bandwidth.
The specific data is subject to PDF, and the above content is for reference
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