UPA810T-T1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.2dB ~ 2.5dB @ 1GHz
Gain:	7dB ~ 9dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-SO
Base Part Number:	UPA810

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UPA810T-T1 Application Field and Working Principle

The UPA810T-T1 is a general-purpose, high-frequency transistor designed to provide a wide range of high-performance applications including wireless communications, radio frequency (RF) and microwave systems. It is a bipolar junction transistor (BJT), normally used for RF and microwave applications.The UPA810T-T1 is a very versatile device, able to operate efficiently in a wide range of temperatures, current levels and electrical characteristics. Its power capabilities are quite impressive with a peak power output of 335 mW and maximum operating frequency of 2 GHz. The UPA810T-T1 transistors offer low noise levels, very low input impedance and excellent gain stability over temperature.UPA810T-T1\'s working principle is based on the fact that a current flowing through an N-type base region will cause a depletion of charge carriers in the base and an accumulation of charge carriers in the collector region. This causes an increase in the amount of electrons in the collector region, which increases the voltage across the collector-emitter junction. This voltage is then amplified by the transistor and can be used to power up various circuits.The UPA810T-T1 is designed to hold up in harsh environments and provides excellent heat dissipation. In addition, it has an integrated heater system, which keeps the device within the optimum temperature range, thus further improving its performance. The UPA810T-T1 has a wide range of applications in wireless communication, RF and microwave systems, as well as consumer electronics.When it comes to power requirements, the UPA810T-T1 can be operated over a wide range, from 0 to 50V. The collector-emitter saturation voltage (VCEO) is 2V and the collector-base breakdown voltage (VBCO) is 5V. The maximum collector current is 50mA at an operating temperature of 25°C. The device has a high frequency response, with a minimum frequency of DC and a maximum frequency of 4GHz.Overall, the UPA810T-T1 is a reliable and powerful device suitable for use in high frequency applications including RF and microwave systems. It offers great performance paired with low power consumption. Moreover, it is robust and able to hold up in harsh environments.

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