UPA806T-T1-A Allicdata Electronics

UPA806T-T1-A Discrete Semiconductor Products

Allicdata Part #:

UPA806T-T1-ATR-ND

Manufacturer Part#:

UPA806T-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF DUAL TRANSISTORS NPN SOT-363
More Detail: RF Transistor 2 NPN (Dual) 6V 30mA 12GHz 200mW Sur...
DataSheet: UPA806T-T1-A datasheetUPA806T-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: UPA806
Description

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The UPA806T-T1-A is a type of bipolar radio frequency (RF) transistor. This transistor can be used in various electronic circuits as a power amplifier and as a voltage regulator. As a bipolar RF transistor, it has a wide range of applications, including radio transmission and reception, radar, remote communication systems and high-frequency switching amplifiers. In addition, it can be used in power conversion circuits and has a wide range of power handling capabilities.

The working principle of the UPA806T-T1-A is based on a bipolar junction transistor (BJT). A BJT is a three-terminal semiconductor device composed of two individual p–n junction transistors connected back-to-back. The p–n junction transistors in a BJT act as current-controlling devices that allow current to flow from the emitter to the collector.

The collector of the UPA806T-T1-A is the source of current flow, while the emitter is the return path. The base of the transistor is used to control the amount of current flowing between the collector and the emitter. When the base voltage is increased, more electrons flow from the emitter to the collector, resulting in a larger current flowing through the transistor.

The UPA806T-T1-A has a Vce (collector-emitter voltage) rating of 25 V and a collector dissipation rating of 1.0 Watts. It also has a frequency range of up to 1 GHz and a power gain of up to 14 dB. These characteristics make it suitable for use in a variety of RF circuits.

The UPA806T-T1-A is a versatile RF transistor, with a wide range of applications. It can be used as an oscillator, amplifier, attenuator, and voltage regulator, as well as a high-frequency switching device. It can be used in various radio communication systems, such as radio broadcast, remote communication and radar systems. Additionally, it can be used in power conversion circuits, as well as in high-frequency applications such as television amplifiers.

The UPA806T-T1-A is a reliable and highly efficient RF transistor that can be used in a range of applications. It is a versatile device with a wide range of power handling capability and a wide frequency range. It is a cost-effective solution for RF power amplification and voltage regulation needs.

The specific data is subject to PDF, and the above content is for reference

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