
UPA810T-T1-A Discrete Semiconductor Products |
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Allicdata Part #: | UPA810T-ATR-ND |
Manufacturer Part#: |
UPA810T-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF DUAL TRANSISTORS NPN SOT-363 |
More Detail: | RF Transistor 2 NPN (Dual) 12V 100mA 4.5GHz 200mW ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 4.5GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 1GHz |
Gain: | 9dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | UPA810 |
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UPA810T-T1-A is a four-terminal RF Bipolar Transistor (BJT) manufactured by STMicroelectronics. It is designed to be used in RF circuits such as amplifiers and oscillators, among others. It was released in 2016 and is part of the UPA Family of devices. In order to understand how this device works and its application field, the following sections will go over the features, operation and advantages of the UPA810T-T1-A.
Features
The UPA810T-T1-A is made of an epitaxial base Bipolar NPN transistor in a SOT-89 SMD (Surface Mount Device) package. This type of SMD package has the distinct advantage of being cost effective and space efficient. The device is specifically targeted for applications at 1,400MHz and it has a typical gain of 13dB, which means that it is able to amplify or reduce signals at the desired frequency. It also has a maximum collector current rating of 1A, which makes it suitable for medium-sized power applications. Additionally, the maximum power dissipation of the UPA810T-T1-A is 1.5 watts, providing enough current to power numerous circuits.
Operation and Advantages
The UPA810T-T1-A operates as an amplifier, meaning that it amplifies and reduces the strength of signals in an RF circuit. This device has two terminals connected to a power source and two terminals connected to a load resistance. When a voltage is applied to the two power source terminals, a current is generated that passes through the base-emitter junction. This current reduces the current passing through the collector-emitter junction, which results in an amplification of the input signal. This type of operation is referred to as common base, and it allows for stable, low-distortion results.
The UPA810T-T1-A is well-suited for RF applications such as amplifiers and oscillators. It is able to provide a good amplification for signals at 1,400MHz and its low cost and small size make it an attractive option for many applications. Additionally, the UPA810T-T1-A’s power dissipation and collector current rating make it suitable for various power-related applications such as RF power amplifiers. Finally, its common-base operation gives it a low-distortion characteristic, making it a good choice for amplifying broadband signals.
In conclusion, the UPA810T-T1-A is a four-terminal RF Bipolar Transistor (BJT) that is well-suited for amplifying and reducing signals at 1,400MHz. It is designed to be cost-effective and space-saving, and its power dissipation and maximum collector current of 1A make it suitable for a variety of applications. Additionally, its common-base operation gives it a low-distortion characteristic, making it ideal for amplifying broadband signals. For these reasons, the UPA810T-T1-A is a great choice for RF circuits such as amplifiers, oscillators, and power amplifiers.
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