UPA802T-T1-A Allicdata Electronics
Allicdata Part #:

UPA802T-T1-A-ND

Manufacturer Part#:

UPA802T-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF DUAL TRANSISTORS NPN SOT-363
More Detail: RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Sur...
DataSheet: UPA802T-T1-A datasheetUPA802T-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The UPA802T-T1-A, or UPA802T, is a type of bipolar junction transistor (BJT) used in radio frequency (RF) applications. These transistors come in a variety of shapes and sizes, and can be used in amplifier circuits to improve signal-to-noise ratio, reduce harmonic distortion, and increase gain and linearity. Additionally, UPA802T transistors are easily implemented in designs, and their reliable performance makes them ideal for amplifying both analog and digital signals.

In terms of structure, BJTs generally consist of three regions: the emitter, the base, and the collector. In UPA802T-T1-A transistors, the base is made from a conductive material, such as silicon or germanium, while the emitter and collector are made from an electrically-conductive semiconductor, such as silicon. Electrons can travel between the emitter and the collector by first entering the base, where they are attracted by the higher voltage applied to the base layer. This allows a current to flow between the emitter and the collector, allowing the transistor to act as an amplifier and increase the output voltage when an input voltage is applied.

UPA802T-T1-A transistors can be used in a wide range of RF applications, such as wireless communication, radio broadcasting, and satellite and radar systems. In these applications, UPA802T transistors are often used to amplify and mix RF signals, as well as providing power gain in a variety of circuits. For example, they can be used in radio receivers to amplify the signal from an antenna, as well as in radio transmitters to boost the signal before it is sent out. UPA802T transistors can also be used to adjust the frequency of a signal, and are commonly used as oscillators and frequency multipliers. Additionally, in amplifier circuits, UPA802T transistors can be used to increase the available output power and reduce harmonic distortion.

In terms of performance, UPA802T-T1-A transistors are very efficient, boasting a maximum frequency of between 1 and 4GHz, depending on the application. Additionally, these transistors offer low noise levels, meaning they can be used to amplify weak signals and provide good signal-to-noise ratios. Moreover, UPA802T transistors are capable of handling large power changes, making them suitable for use in amplifier circuits that require a high level of power regulation. Furthermore, UPA802T-T1-A transistors can also be used to provide high-frequency switching, and their high noise immunity makes them suitable for many radio communication systems.

Overall, UPA802T-T1-A transistors are highly versatile, and their simple structure and reliable performance make them ideal for a variety of RF applications. By utilizing their low noise levels, high power handling capabilities, and high-frequency switching ability, engineers can easily implement these transistors into their designs and take advantage of their versatile performance.

The specific data is subject to PDF, and the above content is for reference

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