UPA895TS-A Allicdata Electronics
Allicdata Part #:

UPA895TS-A-ND

Manufacturer Part#:

UPA895TS-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN DUAL 6-SMINI
More Detail: RF Transistor 2 NPN (Dual) 5.5V 100mA 6.5GHz 130mW...
DataSheet: UPA895TS-A datasheetUPA895TS-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: --
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-Super Lead-Less MiniMold
Base Part Number: UPA895
Description

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The UPA895TS-A is a high-power transistor that has applications in the Radio Frequency (RF) domain. It is a Bipolar Junction Transistor (BJT) used for amplifier, broadband and pulse amplifier designs, as well as high-efficiency switch designs.

The UPA895TS-A is a NPN transistor with a SOT143-4L package, which is RoHS compliant and has a collector emitter voltage of 90V and a DC current gain of 30 minimum. It has a TO-3PN package with a ceramic housing and a glass seal, intended for automation assembly lines. It is an epitaxial transistor designed with a quality control plan, which helps ensure a wide operating junction temperature range and high reliability.

The working principle of the UPA895TS-A is based on the base-collector electrical junction of the BJT. This junction is known as the bipolar junction or base-collector junction, where current from the base electrode passes through an insulating barrier in the substrate to reach the collector electrode. When this happens, the collector voltage initiates a junction field-effect transistor, which then begins to conduct current between the base and collector electrodes. The amount of current passing through the UPA895TS-A is determined by the amount of base current passing through the junction.

Due to its wide range of features, the UPA895TS-A transistor is suitable for RF amplifier, power amplifier, broadband amplifier and switch circuit designs.such as cell phones, broadband communication systems, base-stations, ISM (Industrial, Scientific, Medical) applications and automotive devices. It is also useful in industrial or consumer applications such as navigation, navigation systems, radar,aerospace, and defense systems. This transistor can operate up to 2.5 Amps of collector current and exhibits high voltage performance.

The UPA895TS-A transistor is widely used in multiple applications due to its high-performance characteristics and its wide operating range. It is one of the most popular BJTs on the market, offering reliable and efficient service. The UPA895TS-A provides excellent power densities, making it a great choice for high-power systems. It is also very efficient and can reduce power losses significantly. This makes it ideal for use in commercial, automotive, and military applications.

In conclusion, the UPA895TS-A transistor is a great choice for high-power RF amplifier, power amplifier, broadband amplifier and switch circuit designs. Its wide operating range, excellent power and efficiency make it a great option for commercial, automotive, and military applications. Its excellent performance characteristics and its reliability make it the perfect transistor for any demanding application.

The specific data is subject to PDF, and the above content is for reference

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