UPA814T-A Allicdata Electronics
Allicdata Part #:

UPA814T-A-ND

Manufacturer Part#:

UPA814T-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 9GHZ SOT-363
More Detail: RF Transistor 2 NPN (Dual) 6V 100mA 9GHz 200mW Sur...
DataSheet: UPA814T-A datasheetUPA814T-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SO
Base Part Number: UPA814
Description

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The UPA814T-A is a bipolar junction transistor (BJT) designed for radio frequency (RF) applications. This device combines reliability and performance, making it a great choice for use in a wide range of RF circuits.

This device is a NPN RF BJT, which means that it is used to amplify and switch electrical signals in the radio frequency range. It features low noise and high gain, making it suitable for high frequency applications such as cellular and WiFi systems.

The UPA814T-A is made up of two semiconductor junctions, known as N and P type material. These junctions form the source and drain of the device, providing the current path between the two. The size of the area between the junctions determines the amount of current which can be passed through the device. This is known as the junction area, and its size is determined by the device’s process technology.

The UPA814T-A also has a collector, which is an electrode that is used to collect the current from the junctions. The current is then conducted to the load. The size of the collector determines the amount of current that can be collected, which is known as the collector area.

The UPA814T-A also features a range of input capacitances, which is important for any RF application. This helps to ensure that the device’s operation is not affected by any changes in frequency, allowing it to operate smoothly across a broad range of frequencies.

The UPA814T-A also has an emitter, which is an electrode that is used to emit the current. The emitter area is very important as it determines the voltage drop across the device.

The UPA814T-A is also designed to operate within a specified temperature range. This range is set by the device’s junction temperature coefficient, which is the temperature coefficient of the device’s performance.

The UPA814T-A can be used in a variety of applications due to its high RF performance and low-noise operation. It is well suited for use in cellular base stations, WiFi base stations, microwave communication systems, remote control systems, RF test equipment, and satellite communication systems.

In conclusion, the UPA814T-A is a high performance NPN BJT designed for use in RF applications. It features a range of input capacitances, an optimized junction temperature coefficient and low-noise operation. This device is an excellent choice for use in a wide range of RF circuits.

The specific data is subject to PDF, and the above content is for reference

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