
Allicdata Part #: | UPA812T-A-ND |
Manufacturer Part#: |
UPA812T-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF DUAL TRANSISTORS NPN SOT-363 |
More Detail: | RF Transistor 2 NPN (Dual) 10V 65mA 7GHz 200mW Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.4dB @ 1GHz |
Gain: | 12dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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UPA812T-A is a class of semiconductor device categorized under transistors, bipolar junction transistor (BJT), and RF. It provides high performance, low cost and low power consumption solutions for wide-band communication and core chips for users. Among other transistors, UPA812T-A is designed and manufactured with specific high gain and stability, which makes it a high reliable and superior choice for applications such as radio frequency (RF) amplifiers and low noise amplifiers.
The working principle of UPA812T-A is based on the inherent characteristics of bipolar transistors. All bipolar transistor amplifiers or radio frequency amplifiers consist of an input stage, an output stage and two or more transistors. The two transistors are arranged in such a way that one works as an input and the other works as an output. Whenever an input signal is applied, it enters the base of the first transistor, which, in turn, converts it into an amplified output signal. This output signal then passes through the base of the second transistor and is converted into a louder and more amplified output signal. This amplified signal, in turn, reaches the output stage of the amplifier.
UPA812T-A is characterized by its wide-band frequency response. This means that the transconductance of the device will stay constant over a wide frequency range and provides high performance for users. UPA812T-A transistors are also designed for low return loss so that the device has low noise and distortion characteristics. With its high current gain and output power, UPA812T-A transistors are suitable for all applications requiring high-power RF amplification.
UPA812T-A transistors are mainly used in RF amplifiers, radio or wireless communication systems. It is also used in low noise amplifier (LNA) designs. With features such as high speed switching and high-performance linearity, it is ideal for data communication systems. Additionally, because of its wide frequency range, UPA812T-A transistors are also suitable for satellite communication, broadcast television and frequency synthesizer, radar detectors and various other high-frequency applications.
The UPA812T-A offers some truly extraordinary performance and reliability. With a compact size and easy mounting, this transistor is a winning choice for any application involving radio frequency amplifiers. It provides superior performance over traditional transistors and is ideal for high power applications that demand an incredibly fast response time.
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