XN0411100L Discrete Semiconductor Products |
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Allicdata Part #: | XN0411100LTR-ND |
Manufacturer Part#: |
XN0411100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0411100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | MINI6-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XN0411100L is a pre-biased array of three NPN Bipolar Junction transistors (BJTs). It is designed for use in small-signal applications. The main advantage of using this device is that it is relatively small, has a low power consumption and offers very good signal isolation between the different transistors.
The device is basically an integrated circuit composed of three independent transistors. Each transistor is connected in a common emitter configuration, with an additional common base regime. This means that the transistors share a common input signal and are used to amplify the signal. The transistors are connected in such a way that the transistors are "pre-biased", meaning that they are already activated and ready to receive the signal before any input is applied. This reduces the amount of time needed to power up the device and can improve performance in applications requiring fast response times.
In terms of applications, the XN0411100L can be used in a number of different audio applications including amplifiers, tone control circuits and filters. It can also be used in radio-frequency (RF) applications such as amplifiers and mixers. The device is particularly well suited for applications requiring a low power configuration.
The working principle behind the XN0411100L is fairly straightforward. When a signal is applied to the transistors, the signal is amplified by each transistor’s amplification capabilities. The amplified signal is then output from the device. The device’s power consumption depends on the magnitude of the signal being amplified. The device has a high impedance input stage allowing for a wide variety of signals or waveforms to be amplified, including sine waves and other non-linear waveforms.
In addition to its versatile design, the XN0411100L also offers low thermal resistance, making it well suited for both high temperature and low temperature applications. The device also has an improved breakdown voltage, which improves its general reliability. This also means that the transistors can tolerate much higher voltages than other types of BJT arrays.
Overall, the XN0411100L is a pre-biased array of three Bipolar Junction Transistors that is well-suited for a number of small-signal applications. It is a low power device with good signal isolation capabilities and excellent thermal resistance. It can also handle a wide range of signal waveforms and has a improved breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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