XN0421F00L Discrete Semiconductor Products |
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Allicdata Part #: | XN0421F00LTR-ND |
Manufacturer Part#: |
XN0421F00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN MINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XN0421F00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | MINI6-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The XN0421F00L is a pre-biased array of four NPN transistors that have a wide range of applications. This device is ideal for a variety of design requirements in the automotive, industrial, and consumer electronics markets. It is suitable for use in battery-powered, low-voltage applications that require very low power dissipation.
The XN0421F00L contains four NPN transistors in a single package. Each transistor has a maximum collector current of 500 mA and an input characteristic curve which allows it to operate in a single stage up to 20 V. This device is designed to be used as a high-speed switching device in a variety of applications.
The XN0421F00L is designed for low-power and high-speed operation. The device can be utilized in a wide range of switching circuits and amplifier applications. The device is specially designed to minimize power losses during switching operations. The device is also designed to reduce noise levels associated with switching applications.
The XN0421F00L utilizes a pre-biased structure which offers improved performance and reduced switching times. This structure allows the device to operate reliably in a single stage up to 20 V. The pre-biased structure also provides excellent thermal stability. The device is also designed to be robust and to withstand the effects of thermal shock.
The working principle of the XN0421F00L is based on the NPN transistor array. When a current is applied to the device, the collector current from the array of NPN transistors is amplified. The gain of the NPN transistor array is determined by the ratio of collector current to base current. The current gains of the four NPN transistors are paralleled to form a single higher gain NPN transistor for switching and amplifier applications.
The XN0421F00L is designed for use in a wide range of switching and amplifier applications. The device is suitable for battery-powered, low-voltage applications that require low power dissipation. The device is ideal for automotive, industrial, and consumer electronics applications. It is also suitable for use in a range of amplifier and switching applications where low power dissipation and high-speed operation are required.
The specific data is subject to PDF, and the above content is for reference
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XN0460800L | Panasonic El... | 0.0 $ | 1000 | TRANS NPN/PNP 50V/10V MIN... |
XN0460900L | Panasonic El... | 0.0 $ | 1000 | TRANS NPN/PNP 20V/50V MIN... |
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