Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms, 4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V / 50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	500nA, 1µA
Frequency - Transition:	150MHz, 200MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	MINI6-G1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

XN0438100L Application field and Working principle

The XN0438100L array is a pre-biased Bipolar Junction Transistor (BJT). It is a combination of eight NPN transistors and eight PNP transistors that are each connected to an emitter resistor and integrated into a single package. The XN0438100L is designed to operate at an optimal frequency ranges of fifty to one hundred Kev. Generally a single transistor can be used to amplify a signal but the results may not be satisfactory when the signal is complex or strong. This is when an array of transistors comes in handy and let’s see what makes this array so special.

Package Construction

The XN0438100L comes in a TO-220 package with a total of sixteen placements for the chips. The first chip is an NPN transistor connected to an emitter resistor with a resistance of 1ohm and the second is a PNP transistor connected to an emitter resistor with a resistance of 1ohm. The remaining fourteen chips are arranged in pairs, each pair consisting of an NPN and PNP transistor. These components are connected in parallel to a common collector node, making them an array. The array is then connected to a ground node.

Functionality

The XN0438100L array is designed to deliver high volumes of power with minimal losses in performance. This is achieved by connecting all transistors in the array to their own emitter resistor, and this reduces the amount of current flowing through each transistor and ensures a smooth transition when amplifying a signal. The result is an amplified signal with low distortion, even at minimal inputs.

Benefits

The XN0438100L array is easy to install and is reliable in its performance. With an on-chip oscillator, it is suitable for use in various fans, motor control and audio applications. In addition, the array operates with low thermal fluctuations and therefore reduces strain on other components.

Disadvantages

The main disadvantage of the XN0438100L array is its limited frequency range. Depending on the application, it may not be suitable when the signal is outside the specified frequency range. This may limit the usage of this array for some applications.

Conclusion

The XN0438100L array is a versatile and reliable pre-biased Bipolar Junction Transistor (BJT). It is an array of sixteen chips, arranged in pairs and each chip has a dedicated emitter resistor. This array is suitable for a variety of applications, such as fans, motor control and audio applications, but its limited frequency range makes it unsuitable for some signals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description