XN0421000L Discrete Semiconductor Products |
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Allicdata Part #: | XN0421000LTR-ND |
Manufacturer Part#: |
XN0421000L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN MINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | XN0421000L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | MINI6-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
XN0421000L Application Field and Working Principle
The XN0421000L is a high-performance, low quiescent current (IQ) pre-biased transistor array, designed for use in numerous applications. This array is ideally suited for RF applications, where low add-on array noise is critical and maximum dynamic range is desired. As a transistor array, it provides gain and high output power levels with the use of small application specific PC boards or multichip modules. Additionally, the XN0421000L array features built-in isolation protection and a wide range of gate drive levels.
Features of the XN0421000L
The XN0421000L is a pre-biased bipolar transistor array that provides excellent performance in a wide variety of applications. It has a high-performance process and has been designed with an advanced circuit structure for maximum efficiency. The array is capable of providing up to 6A of current. It has a low quiescent current (IQ) of only 10mA, which is ideal for power saving applications. The array also features built-in isolation protection and a wide range of gate drive levels. It is designed for use in numerous applications, such as TV systems, car electronics, cell phone networks, and radio-frequency applications.
Working Principle of the XN0421000L
The XN0421000L is a pre-biased bipolar transistor array that works on the principle of collector-base current. This current flows between the collector and the base of the transistor. The base current is controlled by the gate voltage and this controls the amount of current flowing through the transistor. The resultant current is further amplified by the presence of a transistor emitter, which results in higher current. As well, the transistor array is capable of providing an array of parallel transistors working in unison and sharing the base current. This enables the transistors to function simultaneously in a greater power range.
Applications of the XN0421000L
The XN0421000L array is ideally suited for use in numerous applications. It can be used for a wide range of radio-frequency (RF) applications due to its low add-on array noise and dynamic range. Additionally, it can be used for car electronics and TV systems, as well as in cell phone networks. It can also be used for PA and amplification systems, as well as numerous audio applications. Other applications that can benefit from the XN0421000L include voice and data communication systems, military and aerospace systems, medical electronics, and robotics.
Conclusion
The XN0421000L is a high-performance, low quiescent current (IQ) pre-biased transistor array. Its advanced circuit structure and high-performance process ensure efficient operation in a plethora of applications. It is suitable for use in a wide range of RF applications and other applications such as PA systems, audio applications, as well as car electronics, cell phone networks, voice and data communication systems, and military and aerospace systems. Moreover, its built-in isolation protection and a wide range of gate drive levels make it an excellent choice for the reliable and efficient operation of a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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