XN0411400L Allicdata Electronics

XN0411400L Discrete Semiconductor Products

Allicdata Part #:

XN0411400LTR-ND

Manufacturer Part#:

XN0411400L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL PNP MINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: XN0411400L datasheetXN0411400L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: MINI6-G1
Description

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Bipolar junction transistor (BJT) arrays are a type of transistor structure where multiple BJTs are combined and linked together. The XN0411400L is one such array and is designed to provide optimized unit gain and high level stability. Such arrays are used to amplify signals in a variety of applications in a variety of fields and situations.

The XN0411400L is a 7-element pre-biased BJT array which is designed to withstand relatively large current overloads and maintain high level stability. The device has seven BJT elements which are linked together via a series of contacts. These contacts are made of a material which can withstand high current although the actual capability in this instance will depend upon the construction of the device.

The pre-biased operation of the XN0411400L means that the seven elements are already "plugged in" to one another, meaning that the device requires no additional external biasing or current-limiting components in order to operate. This reduces the complexity of the implementation of the array and also reduces the cost of implementing the array in comparison to using other methods.

The XN0411400L is designed primarily for use in voltage and current amplifying applications. Its high level stability makes it an ideal choice for applications requiring a reliable and consistent level of amplification over time. This type of amplifier is often used in audio applications such as amplifying microphones, CD players, headphones, and other audio equipment. It is also used to amplify signals in radio communication systems and can be used in medical equipment to amplify signals from sensors.

When it comes to the working principle of the XN0411400L array, it relies on the use of BJT elements. These are electrically active elements which allow a current to flow between two points when a voltage potential is applied across them. As the potential increases, the current flow through the BJT increases, meaning the increase in current is proportional to the potential. This then forms the basis for how the XN0411400L array amplifies signals.

The XN0411400L is a pre-biased array, which means that all seven BJT elements are already connected together. This allows the current through the BJT elements to be changed depending on the potential applied to them. As the current and potential increase, the current through the BJT elements increases, creating a larger amplification and gain. This allows signals to be amplified without requiring external components to impose bias and current limits.

The XN0411400L pre-biased array provides excellent performance in voltage and current amplifying applications. Its stable performance over time makes it a great choice for audio, radio, and medical applications. It\'s pre-biased operation reduces the complexity of implementation and cost in comparison to other methods.

The specific data is subject to PDF, and the above content is for reference

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