XN0421500L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	MINI6-G1

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XN0421500L Application Field and Working Principle

The XN0421500L is an array of pre-biased NPN transistors with 8 elements. It is a type of Bipolar Junction Transistor (BJT) that is used in various fields such as automotive, telecommunications, computing, consumer products, and industrial sectors. The XN0421500L has multiple applications due to its pre-biased design. It helps reduce manufacturing steps by eliminating the need for additional bias components. The XN0421500L is a versatile device and is suitable for many applications.The XN0421500L is a common-base pre-biased NPN transistor array with 8 elements in a 6-pin Dual-In-Line (DIP) package. The XN0421500L has a built-in base current mirror circuit that is pre-biased at 20mA per element. This means that all 8 elements are at the same biasing point. This type of pre-biased array is ideal for night-sky video camera applications, where an extended dynamic range is required. It is also suitable for use in other applications that require low noise and high linearity.The XN0421500L is a three-terminal device with a base, collector and emitter. The base of the transistor is connected to the ground, while the collector and emitter are connected to the power source. The XN0421500L is designed to provide current gain by using several transistors connected in parallel. As the current is increased, the voltage drop across the base and emitter of the respective transistor decreases. This decreases the resistance of the transistor and increases the current gain of the device.The working principle of the XN0421500L is quite simple. When the base voltage of a transistor is increased, the current flowing through the collector-base junction increases. This increased current is then passed to the emitter, resulting in an increased current gain. The XN0421500L has an excellent performance even at low base voltages. This helps reduce the power consumption of the device, making it ideal for applications that require power efficiency.The XN0421500L has an operating range of -40to+125 °C and can handle a maximum power dissipation of 500mW. The device is capable of handling high currents, up to 50mA per element. It also has a breakdown voltage of 200V and a storage temperature range of -65to+150 °C. The device also comes with a 10uA leakage current level per element, which is capable of providing a low-level signal processing with minimal noise.The XN0421500L pre-biased transistor array is a versatile device that has multiple applications. It is suitable for night-sky video camera applications, automotive, telecommunications, computing, consumer products, industrial, and many other applications. It can provide low-level signal processing with minimal noise and is capable of high current handling and efficient power dissipation. It is a cost-effective device that can help reduce manufacturing time and cost.

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