XN0411200L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6
Supplier Device Package:	MINI6-G1

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

XN0411200L is a pre-biased semiconductor array that contains an integrated circuit with a low impedance input and a high voltage, high current output. The device is part of a family of pre-biased semiconductor arrays and is a suitable replacement for single-transistor or discrete-based solutions in many power switch applications. XN0411200L features advanced circuit design, packaging and quality control which makes it capable of delivering high power efficiency levels with excellent thermal insulation. This makes it suitable for a wide range of applications, including LED lighting, Electronic Ballast, High/Low Voltage Switching, Digital Controls and Motor Controls.XN0411200L is designed with a built-in gate drive circuit, which allows the user to reduce the power consumption of their system by triggering the power switching at a low voltage. This circuit is engineered to reduce switching losses and therefore provide excellent energy efficiency. The built-in gate drive circuit also provides a low capacitance and low power consumption, making it well-suited for applications which require high frequency switching. The XN0411200L utilizes a low-power input stage, which allows it to be used in a wide range of power switch applications. This low-power input stage is designed to reduce the power dissipation that is commonly found in single-transistor solutions. This feature makes XN0411200L suitable for both small-signal and large-signal switching applications.The device is also designed with built-in overvoltage protection, which helps protect against failure caused by potential hazardous conditions. These protections reduce the risk of breakdowns and ensure safe operation of XN0411200L power switch circuits.XN0411200L utilizes a built-in thermally controlled switching frequency, which helps improve the efficiency and reliability of the device. The thermally controlled frequency provides an additional level of protection against overstressing the device and helps ensure a long life of the power switch circuit. XN0411200L also features a built-in self-protection circuit, which monitors the current at the output side and trips the device off if an overload is detected. This protection circuit improves the safety of the power switch circuits and helps reduce the risk of damage to nearby components. XN0411200L provides excellent performance in power switch applications due to its built-in features, advanced circuit design, and packaging. The built-in overvoltage protection, low power input stage, thermally controlled switching frequency and self-protection circuit provide added reliability, while the low capacitance of the gate drive circuit provides excellent energy efficiency levels. This makes XN0411200L an ideal choice for a wide range of power switch applications.

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