XN0411600L Discrete Semiconductor Products |
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Allicdata Part #: | XN0411600LTR-ND |
Manufacturer Part#: |
XN0411600L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP MINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XN0411600L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | MINI6-G1 |
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XN0411600L Application Field and Working Principle
The XN0411600L is a type of Transistor-Bipolar (BJT) Arrays, Pre-Biased, consisting of a 3-stage Common Base (CB) amplifier array. Each channel of this type of amplifier consists of an NPN transistor, a current-controlled current-source (CCCS) transistor, and an N-channel MOSFET. As such, this device has the potential to operate at very high levels of frequency, making it suitable for a wide range of applications.
Basic Architecture
The basic architecture of the XN0411600L consists of three levels of signal processing. The first stage is a common base (CB) amplifier. The second stage is a CCCS transistor. The third stage is a power MOSFET. The NPN transistor is responsible for amplification, while the CCCS transistor is responsible for linearizing the signal before it reaches the final stage. The MOSFET is used to drive the signal to the output.
The XN0411600L is designed to be pre-biased. This means that the DC operating points have been set to provide maximum power transfer from the input to the output. As a result, this type of amplifier is highly stable and tolerant of input transients. Furthermore, the pre-delay feature helps to reduce the amount of current that is drawn at start-up, and therefore reduces energy consumption.
Application Field: RF Applications
Since the XN0411600L is capable of operating at very high frequencies, it is ideal for RF applications. By accurately controlling the gain of the device, it can be used to amplify weak signals for long distances, allowing for greater range and improved reception. Additionally, the XN0411600L is also capable of providing linear amplification, which helps to reduce distortion and other forms of signal corruption. This makes it a great choice for digital systems, where clarity of the signal is a priority.
Working Principle
The working principle of the XN0411600L is relatively straightforward. The amplifier consists of three stages. First, the common base transistor amplifies and shapes the signal. This is then passed through the CCCS transistor, which linearizes it to the desired level. Finally, the power MOSFET drives the signal to the output, producing the desired amplified result. Since each stage is tuned independently, the output signal is highly accurate and consistent.
Conclusion
In conclusion, the XN0411600L is a versatile pre-biased 3-stage amplifier that can be used in a variety of applications. Its ability to operate at high frequencies and provide linear amplification makes it a great choice for digital systems, and its pre-delay feature helps to reduce energy consumption. Furthermore, its three stages can each be tuned independently, ensuring consistently accurate and reliable results.
The specific data is subject to PDF, and the above content is for reference
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