Allicdata Part #: | ZVP2106ASTOA-ND |
Manufacturer Part#: |
ZVP2106ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 0.28A TO92-3 |
More Detail: | P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E... |
DataSheet: | ZVP2106ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 18V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVP2106AST is a N-channel voltage-controlled enhancement-mode field-effect transistor (FET) designed for device level switch application and can be widely used in GaAs RF device level switches, such as optical fiber communication systems and wireless communication systems. The device works through input level gating to control the current path from the source to the drain, also called source-gate control.
The ZVP2106AST features industry-leading switching performance and low insertion loss with the latest Magnesium Aluminum Gallium Arsenide (GaAs) process. The transistor offers high peak input current, fast switching time, low RDS(ON) even in the low gate to source voltage conduction, and moderately low capacitance for better performance. It is also designed for logic level compatibility and supports high voltage operation with an operating voltage range from 3V to 40V. The ZVP2106AST is considered to be one of the most efficient and reliable FETs available in the market today.
The ZVP2106AST device works on an input voltage level gating process, which means it uses the gate voltage to control the current that passes from the source to the drain. When the input voltage is applied to the gate terminal, electrons are attracted to the gate and accumulate, forming a thin insulation layer between the surface of the substrate (or source) and the gate. When the gate is charged with electrons, it acts as an insulator, which limits the flow of current in this region. Hence, the source current is greatly reduced when the input voltage level is sufficiently high, creating a non-conductive path between the source and drain. When the gate voltage is reduced, the insulation layer dissipates and the current passing from source to drain increases. This is the source-gate control and is central to the working of the ZVP2106AST device.
The ZVP2106AST device has a wide range of applications in optical fiber communication systems, wireless communication systems, computer device switching applications, and switching and power management applications. For example, in optical fiber communication systems, the device can be used for high-speed switching as it has low RDS(ON), fast switching times, and low standard insertion loss. In wireless communication systems, the device can be used for power management as it can support high voltage operations. In computer device switching applications, the ZVP2106AST device can be used for switching due to its fast switching times, low standard insertion loss, and low power consumption. In power management applications, it can be used to control the flow of current by using input level gating process.
The ZVP2106AST is an efficient FET and can be used in a wide range of applications requiring low insertion loss, fast switching times and high peak input current. It has the advantage of being capable of high voltage operations, so it can be used for power management applications as well. The main working principle of the ZVP2106AST is the source-gate control process, which is based on input level gating, where electrons are attracted to the gate and accumulate, forming a thin insulation layer. The source current is greatly reduced when the input voltage level is sufficiently high and the insulation layer dissipates when the gate voltage is reduced. Thus, the ZVP2106AST is an efficient and reliable device for switching, power management, and other computer device switching applications.
The specific data is subject to PDF, and the above content is for reference
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