Allicdata Part #: | ZVP2110GTC-ND |
Manufacturer Part#: |
ZVP2110GTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 100V 0.31A SOT223 |
More Detail: | P-Channel 100V 310mA (Ta) 2W (Ta) Surface Mount SO... |
DataSheet: | ZVP2110GTC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 310mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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The ZVP2110GTC is a heavy-duty N-Channel MOSFET manufactured by Alpha and Omega Semiconductor. It features a wide range of applications, including motor control, power supply, and power switching in industrial, consumer, and automotive systems. The ZVP2110GTC offers very low Rds(on) along with a high-speed switching time to make it suitable for high-efficiency power conversion. This MOSFET is made with a high-performance silicon material, allowing it to operate at up to 112A while still providing excellent thermal cycling performance.
The ZVP2110GTC has an on-resistance of only 8 mOhm, making it suitable for both DC and AC applications. Its high-speed switching time enables fast switching for higher efficiency power converters, and its tight manufacturing specifications mean that the output will remain consistent regardless of the processing conditions. As an N-Channel MOSFET, the ZVP2110GTC provides high-density switching in an efficient manner. This makes it an ideal choice for low-voltage, high-current applications.
The ZVP2110GTC boasts an improved gate charge and reduced gate resistance, allowing it to operate at higher frequencies.The gate-source capacitance is also reduced compared to other MOSFETs, making it well suited to higher frequency applications such as motor control. The on-resistance is also optimised to ensure that the thermal performance of the device is maintained. The ZVP2110GTC also features two additional modes for improved reliability, aiding in the use of this device in demanding applications.
The ZVP2110GTC works on the principle of Metal Oxide Field Effect Transistors (MOSFETs). This type of transistor is a unipolar semiconductor device which has three terminals: gate, source and drain. When the gate voltage is greater than the source voltage, a positive voltage is applied to the gate and the drain, which turns the device "on." This causes the channel between the source and the drain to be opened or closed, depending on the current flowing through the channel. In order for the device to remain "on," the gate voltage needs to be higher than the source voltage. This type of transistor has a variety of advantages, including low power consumption, independent control of current, small size, low cost and most importantly, reliable operation.
The ZVP2110GTC is an ideal choice for applications where an N-Channel MOSFET is needed for high-efficiency power conversion. Its low on-resistance, high-speed switching, tight manufacturing specifications and improved gate charge and reduced gate resistance make it suitable for low-voltage, high-current applications. With its improved reliability and attractive thermal cycling performance, the ZVP2110GTC is ideal for those demanding applications where efficiency and performance count.
The specific data is subject to PDF, and the above content is for reference
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