ZVP2120ASTZ Discrete Semiconductor Products

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The ZVP2120ASTZ is a device in the V-series of high-power MOSFETs from Vishay Intertechnology. It is a drain-to-source reinforced N-channel enhancement mode field effect transistor (FET). It is developed using Vishay\'s proprietary IntelliFET and G5 technology, allowing for high-power operation, tight parameter binning, and improved on-resistance over other discrete MOSFETs. It is perfect for applications requiring high-speed switching, such as DC-DC converters and audio power amplifiers.

The ZVP2120ASTZ package comes in a small and lightweight 6 mm × 11 mm × 1.1 mm power-SO package, with 8.2 milliohms on-resistance at 10 volts. It has minimum input capacitance of 500pf and minimum output capacitance of 3500pf. The ZVP2120ASTZ is designed to operate at an operation range of -55°C to +175°C, with maximum power dissipation of 4 W.

The ZVP2120ASTZ operates on a drain-to-source enhanced MOSFET principle. It uses an N-type conductive channel, which is moderately doped in the source and drains. A gate electrode is formed on the top of this channel through which a voltage bias can be applied. When a positive gate-source voltage is applied, electrons from the source are repulsed towards the drain, which creates a narrow conducting channel between source and drain, allowing current to flow. The more positive the gate-source voltage, the wider this conducting channel becomes, and the higher the current that can flow. Similarly, when a negative gate-source voltage is applied the electrons are attracted away from the drain, and this narrows the conducting channel and reduces current flow.

The device\'s n-channel modulation enhances the on-state current flow and improves the device\'s speed of switching. The built-in enhancement technique results in reduced switch-on/switch-off times and increased power dissipation, making the device suitable for fast switching applications. The device offers improved efficiency in power applications due to its low on-state resistance, which leads to reduction in power losses. It is also designed with a temperature protection feature that senses the device\'s operating temperature and automatically reduces the drain-source voltage, thus preventing it from thermal damage.

The ZVP2120ASTZ is used in a variety of applications, from DC voltages to high voltage rectifiers and switching applications. It is well suited for high-power applications, such as light dimmers, speed controllers, and industrial motor controls. It is also used for audio power amplifiers and power supplies where a high-speed switchover is required. It is particularly suitable for applications in the automotive industry, where fast switching and high power dissipation are essential.

In summary, the ZVP2120ASTZ is an N-channel enhancement mode MOSFET, designed with Vishay\'s IntelliFET and G5 technology, which offers superior switching performance, low on-resistance, and increased power dissipation. Its small and lightweight package and temperature protection feature makes it suitable for a range of high-power applications such as DC-DC converters, audio power amplifiers, light dimmers, and motor control applications.

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