Allicdata Part #: | ZVP2120GTC-ND |
Manufacturer Part#: |
ZVP2120GTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 200V 0.2A SOT223 |
More Detail: | P-Channel 200V 200mA (Ta) 2W (Ta) Surface Mount SO... |
DataSheet: | ZVP2120GTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25 Ohm @ 150mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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The ZVP2100GTC is a type of insulated-gate field-effect transistor (IGFET), specifically a vertical metal-oxide semiconductor field-effect transistor (MOSFET). It is manufactured by Vishay Semiconductor, a leader in transistors and electronic components. The ZVP2100GTC provides high-current and high-voltage switching capabilities, making it applicable to a wide variety of power management applications. Typical uses include power supplies, motor control, and audio and video equipment.
The ZVP2100GTC is a lateral-diffused MOSFET (LDMOS) device, which makes it well-suited for power management applications. The device utilizes a vertical double-diffused structure with an insulated gate, which allows it to have a high current-handling capability and a wide range of operating voltages. Additionally, its high input impedance makes it ideal for switching applications. The ZVP2100GTC also offers a variety of other benefits, including very low on-state resistance, no body effect, and a low EMI susceptibility.
The working principle of a MOSFET is based on charge-carrier technology. The gate is connected to a thin metallic layer, which is covered by an insulating gate material. When exposed to an external voltage, the charge carriers on the gate electrode are attracted to the metallic surface, resulting in a change in current flow. This type of transistor is considered to be relatively efficient, since it does not require a large amount of energy to operate. The ZVP2100GTC takes advantage of this advantage and provides high performance with a minimum of power consumption.
The ZVP2100GTC is used in a variety of applications, but it is particularly suited for switching DC motors and AC motors. Its high current-handling capability makes it suitable for motor control, as it can handle large amounts of power. Additionally, it is used in audio and video equipment, as it can provide switching for high-fidelity amplification systems. Other uses include power supplies, lighting control, and other low-voltage applications.
The ZVP2100GTC is an excellent choice for power management applications that require high current and voltage handling capabilities. Its wide range of operating voltages makes it suitable for a variety of applications, while its low power consumption makes it an efficient choice. Additionally, its high input impedance makes it well-suited for switching applications. This device is an excellent choice for a variety of power management and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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