Allicdata Part #: | ZVP2110ASTOB-ND |
Manufacturer Part#: |
ZVP2110ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 100V 0.23A TO92-3 |
More Detail: | P-Channel 100V 230mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVP2110ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVP2110ASTOB is a N-channel enhancement mode MOSFET transistor that is used for a variety of applications. Most commonly, this part is used in low-noise, low-voltage analog applications that require a high degree of precision for signal conditioning or power management.
The ZVP2110ASTOB has an excellent combination of low input-capacitance, low on-resistance, and low gate charge for its size and can reduce system power loss, improve energy efficiency, and lower overall thermal dissipation. It is a versatile part that is used in low-noise, high-voltage analog applications, including DC-DC converters, motor control, power management, switching power supplies, and rotary commutation circuits.
The ZVP2110ASTOB is designed specifically to improve power efficiency, reduce power loss, and provide higher output currents than an equivalent device with a higher on-resistance and more gate charge. In addition to being capable of reducing system power loss, this device is also well-suited for high-voltage analog applications that require a high degree of precision and low noise, such as signal conditioning, power management, and motor control.
The working principle behind the ZVP2110ASTOB is based on the conductivity modulation effect of MOSFETs. In a MOSFET the gate voltage controls the conductivity of the channel. When a positive voltage is applied to the gate, the conductor is drawn to the drain, allowing current to flow from source to drain. With a negative gate voltage, the conductor is pulled away from the drain and current is blocked from flowing from source to drain.
The size of the MOSFET is one of the major factors that determines the channel conductivity. This is determined by the gate oxide thickness. The ZVP2110ASTOB uses a thinner oxide thickness to increase the channel conductivity and reduce the gate charge. This reduces the power loss and improves the overall efficiency of the device.
The ZVP2110ASTOB is ideal for low-noise, high-voltage analog applications that require accurate control of current flow. It is an excellent choice for applications such as DC-DC converters, motor control, power management, and switching power supplies. Additionally, because of its low power loss and high current capability, it is an ideal choice for systems that require high efficiency and low thermal dissipation.
The specific data is subject to PDF, and the above content is for reference
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