ZVP2106ASTZ Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.5V @ 1mA
Package / Case:	E-Line-3
Supplier Device Package:	E-Line (TO-92 compatible)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	100pF @ 18V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	280mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Box (TB)

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The ZVP2106ASTZ is a high-voltage, high-speed enhancement-mode vertical DMOS (DEPOSITIVE METAL OXIDE SEMICONDUCTOR) field-effect transistor (FET) suitable for use in high-power switching applications. It is suitable for DC-DC converters, motor control, relay drivers, low side switches, and other high-power switching applications. This reliable and cost-effective device is made from a special high-voltage process which enables it to operate at higher voltages than traditional power FETs.The working principle of the ZVP2106ASTZ can be explained in terms of its key components: source, drain and gate. The source and drain are the two main terminals of the device, with the drain being the more positive of the two. The gate is the control terminal and it is the voltage on this terminal that determines the conductivity of the device. When the gate voltage is high, the device is \'ON\' (a conductive path is established between the source and drain). When the gate voltage is low, the device is \'OFF\' (a non-conductive path is established between the source and drain). Therefore, the device can be used to control a large current flow between the two terminals by applying a voltage at the gate. The ZVP2106ASTZ is an enhancement-mode device, meaning that it normally remains off until turned on with an appropriate gate voltage. Once it has been turned on, it can remain on until the voltage at the gate is reduced. This makes it highly suitable for applications where high-power switching is required. Additionally, the device has a low on-resistance making it suitable for switching applications with large current loads.The ZVP2106ASTZ device is rated at 200 V, making it capable of handling large voltages and currents. Additionally, the device is capable of high-frequency switching with a frequency range of up to 1 MHz. It also has a high-temperature operating range of -55°C to 125°C, making it suitable for a wide range of applications. In summary, the ZVP2106ASTZ is a reliable, high voltage, and high speed enhancement-mode vertical DMOS FET suitable for use in high power switching applications such as DC-DC converters, motor control, relay drivers, and low side switches. It is capable of operating at large voltages and currents, with a high frequency switching capability and a wide temperature range. As such, it is an ideal device for use in a range of high-power switching applications.

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