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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
AUIRFS3107TRLTR -ND	AUIRFS3107TRL	Infineon Technologies	View more Series: Automotive, AEC-Q101, HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Power Dissipation (Max): 370W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	9600 Order	800+: $1.9425
497-14717-5-ND	STP315N10F7	STMicroelectronics	View more Series: Automotive, AEC-Q101, DeepGATE, STripFET VII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V Power Dissipation (Max): 315W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $4.0887 10+: $3.6515 100+: $2.9942 500+: $2.4246 1000+: $2.0448
SSM3K56MFVL3FTR -ND	SSM3K56MFV,L3F	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	8000 Order	8000+: $0.0522
IRLML6244TRPBFT R-ND	IRLML6244TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.3A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10A Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 16V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
1727-2227-2-ND	BUK9840-55/CUX	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 5A (Ta), 10.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	17000 Order	1000+: $0.2056
ZXM62P02E6TR-ND	ZXM62P02E6TA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	9000 Order	--
FDN86265PTR-ND	FDN86265P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
785-1184-5-ND	AOT1N60	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power Dissipation (Max): 41.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1439 Order	1+: $0.4536 10+: $0.3956 100+: $0.3052 500+: $0.226 1000+: $0.1808
ZVP3306A-ND	ZVP3306A	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	--
FQP8P10FS-ND	FQP8P10	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1382 Order	--
IRFP460BPBF-ND	IRFP460BPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3094pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	314 Order	--
VP2206N2-ND	VP2206N2	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 750mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 10mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Power Dissipation (Max): 360mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	532 Order	1+: $8.505 25+: $7.7972 100+: $7.5766
296-38621-2-ND	CSD13383F4T	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 44 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 6V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	6000 Order	250+: $0.1429 500+: $0.1182 750+: $0.0985 1250+: $0.0887
QS5U13TR-ND	QS5U13TR	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT5 Package / Case: SOT-23-5 Thin, TSOT-23-5	3000 Order	3000+: $0.1505
IRFH5302TRPBFTR -ND	IRFH5302TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 32A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V Power Dissipation (Max): 3.6W (Ta), 100W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	4000 Order	--
SIR818DP-T1-GE3 TR-ND	SIR818DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
FQP14N30-ND	FQP14N30	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25C: 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Power Dissipation (Max): 147W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	49 Order	--
DMN3016LK3-13DI TR-ND	DMN3016LK3-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
497-16929-2-ND	STD5N80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.4108
SIHB21N65EF-GE3 -ND	SIHB21N65EF-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	387 Order	1+: $3.7044 10+: $3.3075 100+: $2.712 500+: $2.1961 1000+: $1.8521
SIRA18ADP-T1-GE 3TR-ND	SIRA18ADP-T1-GE 3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power Dissipation (Max): 14.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
1727-4603-2-ND	BUK7Y102-100B,1 15	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 102 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.1407
1727-2557-2-ND	BUK7M15-60EX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 42.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 25V Power Dissipation (Max): 62W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	1500 Order	1500+: $0.1724
TSM60NB900CHC5G -ND	TSM60NB900CH C5 G	Taiwan Semiconductor Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Power Dissipation (Max): 36.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	14485 Order	1+: $0.7245 10+: $0.6401 100+: $0.5059 500+: $0.3923 1000+: $0.3097
IXFP36N20X3-ND	IXFP36N20X3	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V Power Dissipation (Max): 176W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	102 Order	1+: $2.2932 50+: $1.842 100+: $1.6783 500+: $1.359 1000+: $1.1462
DMN2450UFD-7DIT R-ND	DMN2450UFD-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 600 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 16V Power Dissipation (Max): 400mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	1000 Order	--
DMN1260UFA-7BDI TR-ND	DMN1260UFA-7B	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 366 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.96nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0806-3 Package / Case: 3-XFDFN	1000 Order	--
SI2302A-TPMSTR- ND	SI2302A-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V Power Dissipation (Max): 1.25W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
RW1A020ZPT2RTR- ND	RW1A020ZPT2R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	1000 Order	8000+: $0.1303
SI2324DS-T1-GE3 TR-ND	SI2324DS-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 234 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
SQJ454EP-T1_GE3 TR-ND	SQJ454EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 145 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
SI4413ADY-T1-E3 TR-ND	SI4413ADY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Vgs (Max): 20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
296-37478-2-ND	CSD19532Q5B	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 50V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	7500 Order	--
FDB070AN06A0-F0 85TR-ND	FDB070AN06A0-F0 85	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.9385
497-13877-2-ND	STL110N10F7	STMicroelectronics	View more Series: DeepGATE, STripFET VII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 107A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) Package / Case: 8-PowerVDFN	1000 Order	--
FDBL0090N40TR-N D	FDBL0090N40	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V Power Dissipation (Max): 357W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	1000 Order	2000+: $1.4865
IXFJ26N50P3-ND	IXFJ26N50P3	IXYS	View more Series: HiPerFET, Polar3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 265 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	7590 Order	1+: $4.5297 30+: $3.713 120+: $3.3508 510+: $2.8074 1020+: $2.4452
IRFH3707TRPBFTR -ND	IRFH3707TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta), 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 15V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3x3) Package / Case: 8-PowerVDFN	1000 Order	--
BSC0909NSATMA1T R-ND	BSC0909NSATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Current - Continuous Drain (Id) @ 25C: 12A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.1529
FQP7P06-ND	FQP7P06	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 410 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	774 Order	1+: $0.7875 10+: $0.6962 100+: $0.5502 500+: $0.4267 1000+: $0.3369

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