ZXM62P02E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXM62P02E6TR-ND |
Manufacturer Part#: |
ZXM62P02E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 2.3A SOT23-6 |
More Detail: | P-Channel 20V 2.3A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXM62P02E6TA Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 5.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXM62P02E6TA is a logic level enhancement type MOSFET, which is widely used in the field of power switch. This P-Channel MOSFET has gate protection diode, very small size, good inductive switching performance and low gate threshold voltage.
The application fields of ZXM62P02E6TA are mainly in power switch and as a load switch. For example, it can switch DC power, AC power, and other electrical signals. It can also used as motor control switch and a low-side switch for controlling high current loads in various electronic systems. Moreover, it can be used in other applications such as electronic communication circuits and audio applications.
MOSFET also known as metal oxide semiconductor field effect transistor is a special type of FET where the gate electrode is isolated from the source and drain by an insulation layer. The gate electrode is then used to control the flow of electrons between the source and drain. This type of transistor is used to control high current loads and the device can operate in either enhancement or depletion mode depending on the type of MOSFET and the voltage applied to the gate. The working principle of the ZXM62P02E6TA is relatively simple. When the gate is driven by a positive voltage, the device turns ON and the drain current flows. When the gate is driven by a negative voltage, the device turns off and the current stops flowing through the drain.
The ZXM62P02E6TA uses a low gate threshold voltage to control the flow of electrons between the source and the drain. This makes it an excellent choice when applied to high current loads as it can quickly switch from conducting to non-conducting states. The device can also function as a low-side switch for controlling higher current loads in various electronic systems. In addition, this MOSFET utilizes characteristics such as low-power operation, low gate threshold voltage, high-speed switching and low noise behavior.
The ZXM62P02E6TA is a popular choice for many power switch applications due to its simple working principle, ease of use and low cost. It is also highly reliable and can be quickly switched from conducting to non-conducting states. Furthermore, it provides excellent performance with low switching losses and high current ratings.
In conclusion, the ZXM62P02E6TA is a common choice for many power switch applications. It has gate protection diode, low gate threshold voltage and high current ratings which make it ideal for high current loads. It also uses a simple working principle and is highly reliable and cost-effective. Therefore, it is widely used in a range of applications including DC power, AC power, motor control switch, load switch, communication circuits and audio applications.
The specific data is subject to PDF, and the above content is for reference
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