STP315N10F7

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STP315N10F7 is a high-power metal-oxide-semiconductor field-effect transistor (MOSFET) suitable for a wide range of low-loss switching and amplification applications like various power stages in audio systems and motor drives. This device comes from the family of discrete transistors from ST Microelectronics. It has a maximum drain-source voltage (VDS) of 100V, drain current (ID) of 315A, and drain-source on resistance (RDS) of 7mΩ. Thus, STP315N10F7 has an exceptionally high current carrying capacity and low voltage drop. It requires very low gate current to turn it on and, thus, can be used in low-current applications. This MOSFET has a maximum gate-source threshold voltage (VGS) of 10V and a maximum gate-source voltage (VGSM) of 20V. This device is capable of very fast switching, with a drain-source fall time of 11ns, and a rise time of 29ns.

STP315N10F7 belongs to the STripFET series of ST Microelectronics. This family of products offers extremely low on-resistance values and high current capability. The devices are manufactured on an advanced proprietary embedded gate trench process that offers superior speed and reduced on-state resistance simultaneously.

STP315N10F7 is mainly used in switching regulators, motor control, DC-DC converters, high-speed power drivers, and other applications needing very low on-state resistance and high switching speed. This device can be used as a power MOSFET in power management systems. Moreover, it is suitable for high-frequency applications such as switching power supplies, audio amplifiers, and high-speed logic circuits.

The working principle of STP315N10F7 involves the use of four terminals - the gate, drain, and source, and the body. When a positive voltage is applied to the gate, it creates a strong electric field in the channel connecting the drain and the source. This electric field induces a current transmission through the channel, allowing a drain-to-source current to flow. The current flow is controlled by the size of the voltage applied to the gate. The body terminal is connected to the source and is used to control the threshold voltage.

In summary, STP315N10F7 is a high-power MOSFET designed for low-loss switching and amplification applications. It features a maximum drain-source voltage of 100V, maximum drain-source on resistance of 7mΩ, and maximum gate-source threshold voltage of 10V. It is ideal for high-frequency switching applications and can be used in switching regulators, motor control, DC-DC converters, high-speed power drivers, and high-speed logic circuits. Its working principle involves applying positive voltage to the gate to create an electric field in the channel connecting the drain and the source, allowing a drain-to-source current to flow.

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