SQJ454EP-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	85nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	145 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to SQJ454EP-T1_GE3

The SQJ454EP-T1_GE3 is an advanced and reliable device for use in general purpose switching applications. It is a single-gate MOSFET with a P-channel, normally-on configuration and an on-resistance of only 100 ohms. This device is designed for use in linear and low-power circuits where low voltage and current ratings are required, and it can be used in both AC and DC applications. The SQJ454EP-T1_GE3 offers superior performance and reliability, making it a great choice for use in various applications.

Application Field

The SQJ454EP-T1_GE3 provides excellent performance and reliability for use in general purpose switching applications. It is ideal for use in audio, video and computer circuits, as well as other low-power devices, such as LCD displays, LED lights and signal transistors, where a low voltage and current rating is required. It is especially suitable for use in low-power intermittent applications, such as switchers, rotary switches and push-button switches. Due to its low on-resistance, it can be used in high-impedance circuits, such as line-level signal switching.

Working Principle

The SQJ454EP-T1_GE3 is a P-channel MOSFET, which is a "Normally-on" device. This means that when the gate voltage of the device is 0V, the device will be "on", meaning that it will have P-MOSFET conduction. In order to turn the device off (break conduction), a positive voltage (such as 5V) must be applied to the gate. Once the device is "off", it will remain off until the gate voltage is dropped to 0V, at which point it will turn "on" again.The SQJ454EP-T1_GE3\'s main feature is its low on-resistance of 100 ohms, making it ideal for use in high-impedance circuits. This low-resistance allows the device to pass a small amount of current, which is necessary for higher-impedance applications. The device also has a very low threshold voltage of 0.4V, which ensures that the device needs only a small amount of power to switch on and off.

Conclusion

The SQJ454EP-T1_GE3 is a fantastic device for use in general purpose switching applications. It is ideal for use in linear and low-power circuits, audio, video, computer and LCD displays, as well as other low-power intermittent applications. It is a single-gate MOSFET with a low on-resistance of only 100 ohms and a low threshold voltage of 0.4V, making it perfect for use in high-impedance circuits. With its excellent performance and reliability, the SQJ454EP-T1_GE3 is a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description