| Allicdata Part #: | IXFP36N20X3-ND |
| Manufacturer Part#: |
IXFP36N20X3 |
| Price: | $ 2.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | 200V/36A ULTRA JUNCTION X3-CLASS |
| More Detail: | N-Channel 200V 36A (Tc) 176W (Tc) Through Hole TO-... |
| DataSheet: |  IXFP36N20X3 Datasheet/PDF |
| Quantity: | 102 |
| 1 +: | $ 2.29320 |
| 50 +: | $ 1.84199 |
| 100 +: | $ 1.67832 |
| 500 +: | $ 1.35902 |
| 1000 +: | $ 1.14616 |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 176W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1425pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | HiPerFET™ |
| Vgs(th) (Max) @ Id: | 4.5V @ 500µA |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The IXFP36N20X3 is a high-voltage N-channel MOSFET from IXYS. It is part of the IXFP36N20X3 series of high-voltage MOSFETs. This device is suitable for use in applications where high blocking voltage and low on-resistance is needed.
The IXFP36N20X3 can operate with an operating voltage of up to 500V, a drain-source breakdown voltage of 400V, and a maximum on-state drain current up to 36A. It is constructed with an N-channel trench MOSFET with a very low on-resistance, perfect for high-power applications such as motor control, uninterruptible power supplies, switching circuits and more.
The IXFP36N20X3 can be used in a variety of applications, from low-power to high-power. Low-power applications might include cell phone chargers, audio amplifiers, or small computers. High-power applications may include industrial motor control, uninterruptible power supplies, and switching power supplies.
The IXFP36N20X3 also has very low on-resistance, allowing for high-efficiency operation. The use of this device also allows designers to cut down on the size of the power components, making a system design much more compact.
The working principle of the IXFP36N20X3 is fairly simple. As with all MOSFETs, its operation is based on the presence of a voltage on its gate terminal. When a voltage is applied to the gate terminal, it creates an electric field inside the N-channel MOSFET. The electric field causes the electrons in the channel to move, creating an electric current in the channel. This current is what allows the device to control the current flowing through the channel.
The IXFP36N20X3 is a great choice for applications where high blocking voltage and low on-resistance are needed. It can be used in a variety of applications from low to high power and is great for efficiency and space savings. The device is also relatively easy to use, making it a great choice for designers.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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