QS5U13TR Discrete Semiconductor Products

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The QS5U13TR is a N-channel power MOSFET with a surface mount package that has a rated drain current of 25 amps and drain source voltage of 180 volts. It is ideal for general purpose switching, automotive, and audio applications, due to its low input capacitance, low gate charge and fast switching speed. The QS5U13TR is a single, unipolar junction field effect transistor (FET), which is a semiconductor device made up of two or more terminals, where the current is controlled by an electric field.

The working principle of a FET, and the QS5U13TR, is simple. When the gate-source voltage is equal to the drain-source voltage, or when the gate voltage is equal to zero, the transistor will be in the "cut-off" state, allowing no current to flow through it. If a voltage is applied to the gate of the transistor, an electric field will be created that changes the properties of the transistor, allowing current to pass from the drain to the source, thus turning the transistor "on." This is known as the "enhancement mode" of a FET. If a negative voltage is applied to the gate of the transistor, the transistor will be turned "off." This is known as the "depletion mode" of a FET.

The QS5U13TR is typically used as a power amplifier in automotive and audio applications, due to its low input capacitance, low gate charge and fast switching speed. It is also used in general purpose switching applications, including power supplies, batteries, and solar-powered inverters.

In addition to its low input capacitance and low gate charge, the QS5U13TR also has a feature called "dynamic resistance," which is a measure of the amount of resistance that is created as the voltage increases. Dynamic resistance is important because it allows the amount of current to be controlled in a variety of conditions, making the transistor more stable and efficient. The dynamic resistance of the QS5U13TR is typically between 0.2 and 1.5 ohms.

In summary, the QS5U13TR is a single, unipolar junction field effect transistor (FET) with a power drain source voltage of 180 volts, a rated drain current of 25 amps, and a dynamic resistance between 0.2 and 1.5 ohms. It is used as a power amplifier in automotive and audio applications due to its low input capacitance, low gate charge, fast switching speed, and its ability to control the amount of current in a variety of conditions. The working principle of the QS5U13TR is simple: when the gate-source voltage is equal to the drain-source voltage, or when the gate voltage is equal to zero, the transistor will be in the "cut-off" state, allowing no current to flow through it; and when a voltage is applied to the gate of the transistor, an electric field will be created that changes the properties of the transistor, allowing current to pass from the drain to the source, thus turning the transistor "on."

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