BUK7Y102-100B,115 Allicdata Electronics
Allicdata Part #:

1727-4603-2-ND

Manufacturer Part#:

BUK7Y102-100B,115

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 15A LFPAK
More Detail: N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFP...
DataSheet: BUK7Y102-100B,115 datasheetBUK7Y102-100B,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.14065
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 102 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single

The BUK7Y102-100B,115 is a Power MOSFET designed for general purpose applications. This MOSFET is constructed in an N-Channel enhancement mode version, with integrated gate protection suitable for solar and standby applications. This device is a versatile and relatively inexpensive type of transistor frequently used in the circuit designs of automated devices and robots. It is often combined with microcontrollers to form simple digital circuits.

The MOSFET is available in both a single and dual package and is capable of switching a maximum power of 100W with a maximum drain source voltage of 100V. It features a low operating current and extremely low on-state resistance. This allows for low power dissipation, making the MOSFET a much more efficient solution compared to other transistors.

One of the main advantages of the BUK7Y102-100B,115 Power MOSFET is its high speed when compared to other transistors. This makes it particularly suitable for applications needing fast switching speeds, such as pulse width modulation or H-bridge pairs. Additionally, this device is designed to be able to handle large currents, making it a suitable choice for power circuits such as motor drivers or motor control applications.

This Power MOSFET is often used in low power circuits, such as switching, operations, control systems and other common applications. The Power MOSFET is commonly used to control the conduction and switching of high-frequency signals, ideal for use in audio amplifiers, motors and other sound circuits. It is also often used as a low-pass filter, as it can provide a high-impedance barrier between two circuits.

The working principle behind the BUK7Y102-100B,115 Power MOSFET is that it consists of two or more terminals, the gate, source, and drain. The gate is an insulated gate which is used to control whether or not the device is conducting. When a voltage is applied between the gate and the source and the gate is positive, current can flow from the source to the drain. If the gate is negative, the current flow from the source to the drain is blocked, thus enabling the device to be used as a switch.

Overall, the BUK7Y102-100B,115 Power MOSFET is a versatile transistor that can be used for a variety of applications. Its low power dissipation, fast switching speed, and high current capacity make it ideal for a range of applications, from low power circuits to high power motor control applications. As such, this device can be used to create powerful and efficient circuits for automated devices, robots and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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