Allicdata Part #: | 1727-4603-2-ND |
Manufacturer Part#: |
BUK7Y102-100B,115 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 15A LFPAK |
More Detail: | N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFP... |
DataSheet: | BUK7Y102-100B,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.14065 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 779pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.2nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 102 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Single
The BUK7Y102-100B,115 is a Power MOSFET designed for general purpose applications. This MOSFET is constructed in an N-Channel enhancement mode version, with integrated gate protection suitable for solar and standby applications. This device is a versatile and relatively inexpensive type of transistor frequently used in the circuit designs of automated devices and robots. It is often combined with microcontrollers to form simple digital circuits.
The MOSFET is available in both a single and dual package and is capable of switching a maximum power of 100W with a maximum drain source voltage of 100V. It features a low operating current and extremely low on-state resistance. This allows for low power dissipation, making the MOSFET a much more efficient solution compared to other transistors.
One of the main advantages of the BUK7Y102-100B,115 Power MOSFET is its high speed when compared to other transistors. This makes it particularly suitable for applications needing fast switching speeds, such as pulse width modulation or H-bridge pairs. Additionally, this device is designed to be able to handle large currents, making it a suitable choice for power circuits such as motor drivers or motor control applications.
This Power MOSFET is often used in low power circuits, such as switching, operations, control systems and other common applications. The Power MOSFET is commonly used to control the conduction and switching of high-frequency signals, ideal for use in audio amplifiers, motors and other sound circuits. It is also often used as a low-pass filter, as it can provide a high-impedance barrier between two circuits.
The working principle behind the BUK7Y102-100B,115 Power MOSFET is that it consists of two or more terminals, the gate, source, and drain. The gate is an insulated gate which is used to control whether or not the device is conducting. When a voltage is applied between the gate and the source and the gate is positive, current can flow from the source to the drain. If the gate is negative, the current flow from the source to the drain is blocked, thus enabling the device to be used as a switch.
Overall, the BUK7Y102-100B,115 Power MOSFET is a versatile transistor that can be used for a variety of applications. Its low power dissipation, fast switching speed, and high current capacity make it ideal for a range of applications, from low power circuits to high power motor control applications. As such, this device can be used to create powerful and efficient circuits for automated devices, robots and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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