| Allicdata Part #: | IRFP460BPBF-ND |
| Manufacturer Part#: |
IRFP460BPBF |
| Price: | $ 2.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 20A TO-247AC |
| More Detail: | N-Channel 500V 20A (Tc) 278W (Tc) Through Hole TO-... |
| DataSheet: | IRFP460BPBF Datasheet/PDF |
| Quantity: | 314 |
| 1 +: | $ 2.70000 |
| 10 +: | $ 2.61900 |
| 100 +: | $ 2.56500 |
| 1000 +: | $ 2.51100 |
| 10000 +: | $ 2.43000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 278W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3094pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFP460BPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used for a wide range of applications, from load switching to high-frequency motor control. It features an extremely low input capacitance, high-current capability and low on-state resistance. This makes it suitable for use as switch-mode power controllers and as power devices in audio amplifiers and other high frequency applications.
IRFP460BPBF is a single N-channel depletion mode MOSFET, which has a drain-to-source voltage of 100V and a drain current of 54A. The transistor is designed to operate in a temperature range of -55°C to 150°C and is housed in a TO-247 package. The maximum thermal resistance of the device is 210°C/W.
The working principle of the IRFP460BPBF is based on the channel region formed between the source and drain terminals. When a voltage is applied from the gate to the channel (VGS), the transistor\'s channel resistance is weakened allowing current to flow from the source to the drain. IRFP460BPBF has a high drain-source current rating and a low input capacitance. This combination leads to improved switching performance and high efficiency.
IRFP460BPBF is suitable for switching and control applications in automotive, industrial, consumer and aviation electronics. It can be used as a power device in audio amplifiers, radio transmitters and receivers, air conditioners and other high frequency applications. It is also used as a voltage regulator in battery management systems and as a power switch in motor control systems.
The main applications of IRFP460BPBF include load switching, motor control, power regulation, and audio amplifiers. Its low input capacitance, high current capability and low on-state resistance make it suitable for switching operations and various other applications. The device can be used to drive resistive and inductive loads, and it exhibits excellent thermal stability over a wide range of operating conditions.
In summary, IRFP460BPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used for a wide range of applications, from load switching to high-frequency motor control. It features an extremely low input capacitance, high-current capability and low on-state resistance. This makes it suitable for use as switch-mode power controllers and as power devices in audio amplifiers and other high frequency applications. The device is suitable for switching and control applications in automotive, industrial, consumer and aviation electronics.
The specific data is subject to PDF, and the above content is for reference
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IRFP460BPBF Datasheet/PDF