Allicdata Part #: | BSC0909NSATMA1TR-ND |
Manufacturer Part#: |
BSC0909NSATMA1 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 34V 44A 8TDSON |
More Detail: | N-Channel 34V 12A (Ta), 44A (Tc) 2.5W (Ta), 27W (T... |
DataSheet: | BSC0909NSATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.15288 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 34V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 27W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
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BSC0909NSATMA1 Application Field and Working Principle
The BSC0909NSATMA1 is a advanced MOSFET transistor, combining the most modern concepts of semiconductor construction and circuit design. Its wide range of applications, fast switching speeds, and superior signal fidelity make it an ideal component in many electronics projects.
Features
- High current (ID): 11 A
- N-channel enhancement mode
- Packaged in a SO-8 package
- Gate threshold voltage: 2 V
- Drain drift region resistance: 100 ohm
- Max. operating temperature: 175°C
Application Field
The BSC0909NSATMA1 MOSFET is widely used in a variety of high current and high voltage applications, such as power converters, power supplies, motor control, and automotive electronics. It is also suitable for use as a load switch and high speed logic level converter. Due to its ability to handle both low and high frequencies, it can be used for switching multiple loads on and off quickly, thus providing great energy savings when operated in a power management system.
Working Principle
MOSFETs are voltage-controlled, unipolar transistors with three pins—gate, source and drain. When a voltage is applied to the gate of a MOSFET, it changes from an insulator to a conductor. The source and drain pins then pass current from source to drain, providing the switching control.
The BSC0909NSATMA1 MOSFET works according to this principle. When a positive voltage is applied to its gate, a conducting channel is formed between the source and drain. This causes a current to flow from the source to the drain and allows the MOSFET to act as a switch.
When no voltage is applied to its gate, the MOSFET will remain in its off state and no current will flow through the circuit. This allows the MOSFET to act as a high-speed switch and makes it suitable for a variety of applications in power management systems.
Conclusion
The BSC0909NSATMA1 is a state-of-the-art MOSFET transistor that can be used for a variety of applications. It is highly efficient, fast-switching, and offers superior signal fidelity and high current handling capabilities. Its wide range of applications, from power management systems to motor control, make it an ideal component for many electronics projects.
The specific data is subject to PDF, and the above content is for reference
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