Cap alum 820uf 20% 200v radial - Allicdata Electronics

Related Categories

< 2 3 4 5 6 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FQPF7P20-ND	FQPF7P20	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	6830 Order	--
SFP9640L-ND	SFP9640L	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V Power Dissipation (Max): 98W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
RJK2055DPA-00#J 0TR-ND	RJK2055DPA-00#J 0	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	1000 Order	1+: $0
IRFS4227TRLPBFT R-ND	IRFS4227TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
IRFP9240-ND	IRFP9240	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	--
IRFR9N20DTR-ND	IRFR9N20DTR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF620B_FP001-N D	IRF620B_FP001	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
RDN150N20FU6-ND	RDN150N20FU6	ROHM Semiconductor	View more Packaging: Bulk Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	1000 Order	500+: $1.2027
IXTQ50N20P-ND	IXTQ50N20P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $2.1844
MMIX1F230N20T-N D	MMIX1F230N20T	IXYS	View more Series: GigaMOS, HiperFET, TrenchT2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power Dissipation (Max): 600W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	1000 Order	20+: $23.4958
IRFR9N20DTRL-ND	IRFR9N20DTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRFI630GPBF-ND	IRFI630GPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	678 Order	--
IRFI9620GPBF-ND	IRFI9620GPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	790 Order	1+: $1.7955 10+: $1.6229 100+: $1.3041 500+: $1.0143 1000+: $0.8404
IXFT74N20-ND	IXFT74N20	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	1+: $0
ZXMP2120FFTR-ND	ZXMP2120FFTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 137mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28 Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	36000 Order	--
IXFQ140N20X3-ND	IXFQ140N20X3	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	30 Order	1+: $6.8859 30+: $5.644 120+: $5.0932 510+: $4.2673
IRF630L-ND	IRF630L	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IXFK300N20X3-ND	IXFK300N20X3	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	1000 Order	1+: $16.5186 25+: $14.0409 100+: $13.0497
IXFT220N20X3HV- ND	IXFT220N20X3HV	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	1+: $11.3148 30+: $9.5164 120+: $8.7447
IRF630NSPBF-ND	IRF630NSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V Power Dissipation (Max): 82W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFR9N20DPBF-ND	IRFR9N20DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR9N20DTRLPBF -ND	IRFR9N20DTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 86W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	3000+: $0.317
IRF640FP-ND	IRF640FP	STMicroelectronics	View more Series: MESH OVERLAY Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IRFS4020TRLPBFT R-ND	IRFS4020TRLPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.6983
BS107ARL1-ND	BS107ARL1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	1+: $0
1560-1189-5-ND	GP1M018A020HG	Global Power Technologies Group	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $0
FQP32N20C_F080- ND	FQP32N20C_F080	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IXTH72N20-ND	IXTH72N20	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	30+: $5.6141
SUM90330E-GE3TR -ND	SUM90330E-GE3	Vishay Siliconix	View more Series: ThunderFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 35.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 37.5 mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.5959
MTW32N20EOS-ND	MTW32N20E	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
IXFH66N20Q-ND	IXFH66N20Q	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power Dissipation (Max): 400W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	1000 Order	1+: $0
FDPF18N20FT-G-N D	FDPF18N20FT-G	ON Semiconductor	View more Series: UniFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	1897 Order	1+: $1.4364 10+: $1.2953 100+: $1.041 500+: $0.8097 1000+: $0.6709
IRF640NSTRLPBFT R-ND	IRF640NSTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	18800 Order	--
RJK2057DPA-00#J 0-ND	RJK2057DPA-00#J 0	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	1000 Order	1+: $0
IRFSL4020PBF-ND	IRFSL4020PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IXFR58N20-ND	IXFR58N20	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	30+: $8.2698
IXTA26P20P-ND	IXTA26P20P	IXYS	View more Series: PolarP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	791 Order	--
497-6566-2-ND	STD7NS20T4	STMicroelectronics	View more Series: MESH OVERLAY Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRF9640-ND	IRF9640	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
FDP2670-ND	FDP2670	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Power Dissipation (Max): 93W (Tc) Operating Temperature: -65C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0

< 2 3 4 5 6 >

Hot Searches: cap alum 820uf 20% 200v radial cap alum 820uf 200v radial cap alum 820uf 200v snap cap alum 820uf 200v axial cap alum 820uf 20% 200v flatpack cap alum 820uf 20% 200v snap-in cap alum 820uf 20% 200v snap cap alu 820uf 20% 200v pressfit cap alum 820uf 20% 385v radial cap alum 820uf 20% 350v radial cap alum 820uf 20% 400v radial cap alum 820uf 20% 420v radial cap alum 820uf 20% 450v radial cap alum 820uf 20% 500v radial cap alum 820uf 20% 25v radial cap alum 820uf 20% 16v radial cap alum 820uf 20% 35v radial cap alum 820uf 20% 63v radial cap alum 820uf 20% 80v radial cap alum 820uf 20% 10v radial

Search Result:cap alum 820uf 20% 200v radial

Related Categories