Allicdata Part #: | 1560-1189-5-ND |
Manufacturer Part#: |
GP1M018A020HG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 200V 18A TO220 |
More Detail: | N-Channel 200V 18A (Tc) 94W (Tc) Through Hole TO-2... |
DataSheet: | GP1M018A020HG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M018A020HG is a type of electric field-effect transistor (FET) from the range of Single MOSFETs. It is considered a highly efficient electric component for multiple applications, especially for switching and power management operations. This article provides an overview of the applications and working principle of the GP1M018A020HG.
What is a FET?
A FET is a semiconductor device with four terminals, two of which are gate and source, respectively. Its main purpose is to control the current flow between two other terminals, namely the source and drain. FETs are considered an excellent choice for amplification and switching functions since they function without any contact between the gate and the source, making them low-noise and low-power electrical components.
GP1M018A020HG Application Field
The GP1M018A020HG is typically used for power applications. It is a type of enhancement mode n-channel FET with low total gate charge, low on-resistance, and excellent switching performance. High-frequency operations are particularly suitable for this kind of FET.GP1M018A020HG is typically used in a variety of electrical applications such as high-current motors and power circuits, microwave and RF circuits, and automotive applications. This type of FET is robust and highly efficient, making it a common choice as an interface component.
GP1M018A020HG Features
The GP1M018A020HG has an excellent and consistent on-resistance of 0.018 Ohm, a drain-source breakdown voltage of 20V, and a drain current of 1A. It also has a maximum tolerance of 10% of on-resistance, which means it has consistent performance when applied to applications which require high performance and efficiency. Furthermore, the GP1M018A020HG has a low total gate charge, making it suitable for high-speed applications. It is also quite compact and takes up less PCB space.
GP1M018A020HG Working Principle
A FET is basically a voltage-controlled device, which means that the flow of current is regulated by an external voltage applied to its gate terminal. The GP1M018A020HG is a depletion mode FET, meaning it conducts current only when a positive potential is applied to the gate terminal. When the gate voltage is increased, the channel between the source and drain regions is inverted and this increases the resistance between the two. Conversely, if the gate voltage is decreased, the channel is inverted back into its original state and the resistance between the source and drain goes back to its original value. Therefore, the GP1M018A020HG can be used to control the current flow between the source and drain terminals by varying the gate voltage.
Conclusion
The GP1M018A020HG is a high-performance, low-cost field-effect transistor that is particularly suitable for switching and power management operations. It has an excellent on-resistance and a low total gate charge, making it particularly suited for high-speed applications. Its working principle is based on the fact that it is a depletion mode FET, meaning it conducts current only when the gate voltage is increased. As such, the GP1M018A020HG can be used to precisely control the current flow between the source and drain terminals by modifying the applied gate voltage.
The specific data is subject to PDF, and the above content is for reference
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