
Allicdata Part #: | IRFR9N20DTRL-ND |
Manufacturer Part#: |
IRFR9N20DTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 9.4A DPAK |
More Detail: | N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 86W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFR9N20DTRL is a Depletion Mode Mosfet, suitable for high speed switching applications and very low input capacitor and gate resistor requirements. It is designed to provide a high degree of flexibility in the design of circuit of both digital and analogue applications. It is a top-performance silicon-based switching device designed for a wide range of applications such as computing, telecommunications, storage, audio, video and power control applications.
IRFR9N20DTRL Application Field
The IRFR9N20DTRL is suitable for most applications where a rapid switching time is required. It is widely used in different application fields such as:
- Automotive and lighting
- Converters
- Switching power supplies
- Networking and telecom equipment
- Process control
- Robotics
- Audio and video equipment
- Computer peripherals
IRFR9N20DTRL Working Principle
The IRFR9N20DTRL is designed using advanced silicon planar technology. It works on the principle of field-effect, whereby the conductivity of doped regions of the crystalline silicon will be modulated by an electric field. The electric field is provided by the DC voltage applied to the gate terminal. The gate voltage controls the current flow through the drain pin.
When the gate voltage applied to the IRFR9N20DTRL is greater than the threshold voltage, the device is in a conductive state, and current will flow freely between the source and drain pins. However, when the gate voltage is reduced to less than the threshold voltage, the device turns "off" and no current is conducted from the source to the drain.
The IRFR9N20DTRL is a "Depletion Mode" device, meaning that it is normally in the "on" state, and the gate voltage is used to turn the device "off". This action makes them suitable for applications where a low-side switch is required or for applications where the load must be grounded whenever the switch is not in use. Due to this "always on" feature, it is typically used to switch loads which cannot be left floating, such as batteries, LEDs, relays and motors.
Conclusion
The IRFR9N20DTRL is a popular Depletion Mode Mosfet, suitable for a wide range of applications including automotive and lighting, converters, switching power supplies, networking and telecom equipment, process control, robotics, audio and video equipment, and computer peripherals.
It works on the principle of field-effect, whereby the conductivity of doped regions of the crystalline silicon is manipulated through an electric field provided by the DC voltage applied to the gate terminal. This allows the device to be used as a low-side switch, making it very suitable for applications where the load must be grounded whenever the switch is not in use.
The specific data is subject to PDF, and the above content is for reference
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