IRFR9N20DTRL Allicdata Electronics
Allicdata Part #:

IRFR9N20DTRL-ND

Manufacturer Part#:

IRFR9N20DTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 9.4A DPAK
More Detail: N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-...
DataSheet: IRFR9N20DTRL datasheetIRFR9N20DTRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 86W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFR9N20DTRL is a Depletion Mode Mosfet, suitable for high speed switching applications and very low input capacitor and gate resistor requirements. It is designed to provide a high degree of flexibility in the design of circuit of both digital and analogue applications. It is a top-performance silicon-based switching device designed for a wide range of applications such as computing, telecommunications, storage, audio, video and power control applications.

IRFR9N20DTRL Application Field

The IRFR9N20DTRL is suitable for most applications where a rapid switching time is required. It is widely used in different application fields such as:

  • Automotive and lighting
  • Converters
  • Switching power supplies
  • Networking and telecom equipment
  • Process control
  • Robotics
  • Audio and video equipment
  • Computer peripherals

IRFR9N20DTRL Working Principle

The IRFR9N20DTRL is designed using advanced silicon planar technology. It works on the principle of field-effect, whereby the conductivity of doped regions of the crystalline silicon will be modulated by an electric field. The electric field is provided by the DC voltage applied to the gate terminal. The gate voltage controls the current flow through the drain pin.

When the gate voltage applied to the IRFR9N20DTRL is greater than the threshold voltage, the device is in a conductive state, and current will flow freely between the source and drain pins. However, when the gate voltage is reduced to less than the threshold voltage, the device turns "off" and no current is conducted from the source to the drain.

The IRFR9N20DTRL is a "Depletion Mode" device, meaning that it is normally in the "on" state, and the gate voltage is used to turn the device "off". This action makes them suitable for applications where a low-side switch is required or for applications where the load must be grounded whenever the switch is not in use. Due to this "always on" feature, it is typically used to switch loads which cannot be left floating, such as batteries, LEDs, relays and motors.

Conclusion

The IRFR9N20DTRL is a popular Depletion Mode Mosfet, suitable for a wide range of applications including automotive and lighting, converters, switching power supplies, networking and telecom equipment, process control, robotics, audio and video equipment, and computer peripherals.

It works on the principle of field-effect, whereby the conductivity of doped regions of the crystalline silicon is manipulated through an electric field provided by the DC voltage applied to the gate terminal. This allows the device to be used as a low-side switch, making it very suitable for applications where the load must be grounded whenever the switch is not in use.

The specific data is subject to PDF, and the above content is for reference

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