| Allicdata Part #: | IXTA26P20P-ND |
| Manufacturer Part#: |
IXTA26P20P |
| Price: | $ 4.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 200V 26A TO-263 |
| More Detail: | P-Channel 200V 26A (Tc) 300W (Tc) Surface Mount TO... |
| DataSheet: | IXTA26P20P Datasheet/PDF |
| Quantity: | 791 |
| 1 +: | $ 4.13000 |
| 10 +: | $ 4.00610 |
| 100 +: | $ 3.92350 |
| 1000 +: | $ 3.84090 |
| 10000 +: | $ 3.71700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2740pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA26P20P is a single N-channel twenty volt MOSFET. It is a power MOSFET that is small and cost-effective for both analog and digital circuits. It is used in many different applications including power supply regulation, motor control, DC/DC converters and equipment control. The IXTA26P20P is an excellent choice for these applications due to its low on-state resistance and very low gate-charging/discharging current.
The IXTA26P20P is also used in power amplifier circuits such as audio amplifiers, PAs and integrated circuit amplifiers. The IXTA26P20P can be used in both single-ended and push-pull configurations. It has very low gate-charge and output capacitance which allow it to remain linear and stable over a wide range of frequencies. This makes the IXTA26P20P excellent for audio applications where transient distortion is a concern.
The IXTA26P20P works by using the principles of field-effect transistor (FET) technology. FETs work by using electric fields to control the current through a semiconductor material between source and drain terminals. The source terminal is connected to the source voltage, and the drain terminal is connected to the load. The gate terminal is responsible for controlling the current between the source and drain terminals. When a positive voltage is applied to the gate terminal, the electric field increases and allows current to flow between the source and drain. This is known as enhancement mode, and is the most common operating mode of the IXTA26P20P.
When an IXTA26P20P is in enhancement mode, the only current that is flowing is the gate-charging current, which is used to create the electric field between the source and drain terminals. This gate-charging current is much lower than the current flowing between the source and drain, and can be controlled with a resistor. This low current allows for very efficient operation as well as lower noise and switching times.
A second operating mode of the IXTA26P20P is depletion mode. This is when a negative voltage is applied to the gate terminal, which reduces the electric field and decreases the current between the source and drain. This is used in switching applications where a high drain-source voltage is not needed.
The IXTA26P20P is an excellent choice for many different applications. Its low on-state resistance and gate-charging current makes it suitable for use in power supply regulation, motor control, DC/DC converters and audio applications. Its depletion mode and low gate-charge makes it suited for switching applications. With its small size and cost effectiveness, the IXTA26P is a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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IXTA26P20P Datasheet/PDF