IXTA26P20P Allicdata Electronics
Allicdata Part #:

IXTA26P20P-ND

Manufacturer Part#:

IXTA26P20P

Price: $ 4.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 200V 26A TO-263
More Detail: P-Channel 200V 26A (Tc) 300W (Tc) Surface Mount TO...
DataSheet: IXTA26P20P datasheetIXTA26P20P Datasheet/PDF
Quantity: 791
1 +: $ 4.13000
10 +: $ 4.00610
100 +: $ 3.92350
1000 +: $ 3.84090
10000 +: $ 3.71700
Stock 791Can Ship Immediately
$ 4.13
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXTA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTA26P20P is a single N-channel twenty volt MOSFET. It is a power MOSFET that is small and cost-effective for both analog and digital circuits. It is used in many different applications including power supply regulation, motor control, DC/DC converters and equipment control. The IXTA26P20P is an excellent choice for these applications due to its low on-state resistance and very low gate-charging/discharging current.

The IXTA26P20P is also used in power amplifier circuits such as audio amplifiers, PAs and integrated circuit amplifiers. The IXTA26P20P can be used in both single-ended and push-pull configurations. It has very low gate-charge and output capacitance which allow it to remain linear and stable over a wide range of frequencies. This makes the IXTA26P20P excellent for audio applications where transient distortion is a concern.

The IXTA26P20P works by using the principles of field-effect transistor (FET) technology. FETs work by using electric fields to control the current through a semiconductor material between source and drain terminals. The source terminal is connected to the source voltage, and the drain terminal is connected to the load. The gate terminal is responsible for controlling the current between the source and drain terminals. When a positive voltage is applied to the gate terminal, the electric field increases and allows current to flow between the source and drain. This is known as enhancement mode, and is the most common operating mode of the IXTA26P20P.

When an IXTA26P20P is in enhancement mode, the only current that is flowing is the gate-charging current, which is used to create the electric field between the source and drain terminals. This gate-charging current is much lower than the current flowing between the source and drain, and can be controlled with a resistor. This low current allows for very efficient operation as well as lower noise and switching times.

A second operating mode of the IXTA26P20P is depletion mode. This is when a negative voltage is applied to the gate terminal, which reduces the electric field and decreases the current between the source and drain. This is used in switching applications where a high drain-source voltage is not needed.

The IXTA26P20P is an excellent choice for many different applications. Its low on-state resistance and gate-charging current makes it suitable for use in power supply regulation, motor control, DC/DC converters and audio applications. Its depletion mode and low gate-charge makes it suited for switching applications. With its small size and cost effectiveness, the IXTA26P is a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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