IXTQ50N20P Allicdata Electronics
Allicdata Part #:

IXTQ50N20P-ND

Manufacturer Part#:

IXTQ50N20P

Price: $ 2.43
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V 50A TO-3P
More Detail: N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXTQ50N20P datasheetIXTQ50N20P Datasheet/PDF
Quantity: 1000
30 +: $ 2.18442
Stock 1000Can Ship Immediately
$ 2.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTQ50N20P is an insulated-gate bipolar transistor (IGBT) designed for use in power switching applications. It is a Silicon Carbide device, offering improved efficiency, low on-state power dissipation, and improved performance over standard silicon IGBTs.

The IXTQ50N20P can be found in a range of applications, such as motor drives, lighting, solar and wind energy converters, and power supplies. The device is designed for switching power in a range of up to 50 amps and voltages up to 1200V. This makes it particularly useful for high voltage applications, as the device can provide high power in a small and efficient form factor.

The IXTQ50N20P is based on MOSFET technology, which allows more efficient power handling compared to standard IGBTs. This is achieved using a metal-oxide-semiconductor field-effect transistor (MOSFET) as the input device. This type of transistor is known for its excellent switching characteristics, and allows for high levels of power switching without creating excessive amounts of heat. This helps to improve the efficiency of any application where the IXTQ50N20P is employed.

A critical component of the IXTQ50N20P’s functionality is its insulation. The insulation used in the device helps to reduce power losses and improve the device’s overall performance. The insulation also helps to prevent the device from switching off accidentally, as it helps to prevent shorts and other power-related accidents.

The IXTQ50N20P works by allowing the current to flow through two insulated gates. It is controlled by a voltage applied between the two gates, with the current flowing from one gate to the other, depending on the voltage applied. This allows the transistor to act as a switch, controlling the amount of current that flows through it. This makes it perfect for applications where the flow of current must be rapidly switched on and off.

The IXTQ50N20P is a powerful and efficient switch for use in power electronics applications. Its ability to control power efficiently allows it to be used in demanding applications, and its insulation prevents it from accidentally switching off. Its advanced MOSFET technology makes it ideally suited for a range of different power switching needs, and its small form factor makes it perfect for a range of applications. With its excellent performance in a wide range of conditions, the IXTQ50N20P is an excellent choice for high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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