STD7NS20T4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STD7NS20T4 is a type of N-channel enhancement mode field effect transistor (FET). This MOSFET is designed to illustrate improved characteristics over the FETs of earlier generations in terms of lower RDS(on) and minimized total gate charge for the same level of capacitance. This device is part of the STDxxNS family of FETs, which are available in various packages including TO-220, TO-220F, and D2-PAK as well as many others.

The STD7NS20T4 is most commonly used in applications where low-resistance, low-power consumption and high-switching speed are required. It is capable of achieving very high switching speeds due to its superior physical properties, such as its low input and output capacitance. This FET also has excellent blockage characteristics, which allow it to turn off quickly and efficiently, resulting in reduced power consumption. Additionally, this device has very low on-state resistance, which makes it ideal for use in power switching applications, especially in high-frequency environments.

STD7NS20T4 Application Fields

The STD7NS20T4 is a versatile FET, thus it has many potential applications in different fields. The device can be used in high-speed switching applications, such as DC-DC converters, IGBT, and thyristors, due to its low drain-to-source on-state resistance (Rds(on)). Its low input and output capacitance also enables it to be used in a wide range of high frequency applications, such as broadcast amplifiers and satellite communication, as well as switching applications requiring fast switching speeds.

In addition to being used in power electronics and amplifiers, the STD7NS20T4 can also be used in motor control applications, such as motor regulations, variable speed drives, and motor inverters. Additionally, due to its low on-state resistance (RDS(on)) and high forward current gain (hF(J)), the device can be used in signal circuits, such as line drivers and active filters.

STD7NS20T4 Working Principle

The STD7NS20T4 is a type of Enhancement-Mode Field-Effect Transistor (FET), which relies on changes in electric fields to influence the flow of current. This device works when a positive voltage is applied to the gate input. This voltage will change the electric field between the source and drain, which will then reduce the electrical resistance between these two points.

When the drain-source resistance is at its lowest point, a small current will flow from the source to the drain, providing the necessary current for the load. This device can also be used in reverse and will block any current from flowing from the drain to the source when a negative voltage is applied to the gate.

The STD7NS20T4 is capable of handling high voltages and high currents due to its silicon-oxide structure and low on-state resistance. It is also designed to have a high reverse breakdown voltage, which makes it ideal for use in high voltage applications.

Overall, the STD7NS20T4 is a versatile device that can be used in a variety of applications, thanks to its low on-state resistance, low input and output capacitance, and high forward current gain. Its silicon-oxide structure makes it capable of handling high voltages and high currents. It is also designed to have a high reverse breakdown voltage, which makes it ideal for use in high voltage applications.

The specific data is subject to PDF, and the above content is for reference