Allicdata Part #: | MMIX1F230N20T-ND |
Manufacturer Part#: |
MMIX1F230N20T |
Price: | $ 25.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 168A SMPD |
More Detail: | N-Channel 200V 168A (Tc) 600W (Tc) Surface Mount 2... |
DataSheet: | MMIX1F230N20T Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 23.49580 |
Series: | GigaMOS™, HiperFET™, TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 168A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 378nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 28000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 600W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 24-SMPD |
Package / Case: | 24-PowerSMD, 21 Leads |
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MMIX1F230N20T is a family of high-performance low-voltage MOSFETs. It is a single n-channel enhancement mode device designed for low-voltage operation efficiency and high switching speeds.
The MMIX1F230N20T device is a compact, low-voltage single n-channel Enhancement Mode MOSFET. Its low-voltage operation and ultra-low RDS(on) performance provide power solutions for medium power applications. It is suitable for fast-switching applications such as battery protection, DC/DC converters and load switches.
The MMIX1F230N20T features an increased maximum drain-source voltage of 20V, more efficient on-resistance of 230mΩand a 1MHz switching frequency. Moreover, it operates over a temperature range of -55°C to +150°C and is available in TO-252 and TO-220 packages.
The MMIX1F230N20T\'s working principle is based on the electrostatic control of the channel of a MOSFET. In this type of device, a gate-to-source voltage (Vgs) controls the width of the conducting channel between the source and drain terminals. When the Vgs voltage is higher than the Vth of the MOSFET (threshold voltage), conduction between the source and drain terminals becomes possible. Generally, the higher the Vgs voltage, the wider the conducting channel, which in turn increases the on-state drain-source current.
The MMIX1F230N20T is designed to provide fast, low-voltage switching applications benefit from its improved characteristics. Its increased maximum drain-source voltage of 20V, low-voltage operation and ultra-low Rds(on) performance make it suitable for a wide range of medium power applications, such as battery protection, DC/DC converters, and load switches.
The MMIX1F230N20T is a versatile device that is capable of providing a wide range of solutions in power management and signal processing applications. It provides excellent performance in fast-switching applications with improved Rds(on) performance, increased maximum drain-source voltage, excellent switching speeds, and an improved temperature range. It is available in TO-252 and TO-220 packages; ensuring the right solution for any application.
In conclusion, MMIX1F230N20T is a family of high-performance low-voltage MOSFETs designed for low-voltage operation efficiency and high switching speeds. Its working principle is based on the electrostatic control of the channel of a MOSFET and it is suitable for fast-switching applications such as battery protection, DC/DC converters and load switches. It is capable of providing a wide range of solutions in power management and signal processing applications and is available in TO-252 and TO-220 packages.
The specific data is subject to PDF, and the above content is for reference
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