IXFT220N20X3HV

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IXFT220N20X3HV is a high-drain 20V single N-Channel MOSFET offered by IXYS Corporation. It has Gate-Source Voltage (VGS (TH)) rated at 20V and the Power dissipation rating of 160W. IXFT220N20X3HV has a Low-gate charge of 30nC which helps reduce power dissipation in the Gaon-Source circuit. It carries the industry-standard TO-263 package industry package which ensures the device functions reliably in extreme conditions and eliminates the need for heatsink.

IXFT220N20X3HV can be used in a variety of applications including generic low to medium power amplifier design and power management circuits. It is primarily used in switching circuit applications and it can be used as a switch between a digital circuit and an analog one. IXFT220N20X3HV is also frequently used in power integrated circuits, audio amplifiers and DC voltage regulators. Additionally, the IXFT220N20X3HV is used in LED lighting and pixel drivers, and DC-DC converters.

Since IXFT220N20X3HV is a MOSFETs, it works based on the Metal–oxide–semiconductor (MOS) structure. A MOSFET consists of a source, a drain, and a gate. The structure is made up of two sections: an N-type semiconductor (N-type MOSFET) and a P-type semiconductor (P-type MOSFET). When voltage is applied to the Gate of a MOSFET, it forms an inversion layer between the Source and Drain, which allows current to flow from the Source to the Drain. The IXFT220N20X3HV is an N-type MOSFET, which means that it works best with a positive signal applied to the Gate.

IXFT220N20X3HV is designed with an Avalanche energy rated at 280mJ and a Current-Drive rated at 9.5A, meaning it can be used in applications which require a larger amount of current. The maximum operating temperature of the IXFT220N20X3HV is up to 175°C, which ensures its reliability and safety within the operating environment. In addition, the IXFT220N20X3HV has a Residual Drain-Source Breakdown-Voltage (BVDSS) rated at 250V, making it suitable for high-voltage applications. It also has a Low gate-Threshold-Voltage (VGS(TH)) rating of 3V, making it suitable for low-voltage applications. Its low on-resistance combined with its low threshold voltage make it an ideal choice for current-switching applications.

In summary, IXFT220N20X3HV is a high-drain 20V single N-Channel MOSFET with low gate charge and high-power dissipation properties. It is suitable for a variety of applications including switching circuits, power integrated circuits, audio amplifiers, DC voltage regulators and LED lighting. IXFT220N20X3HV has an avalanche energy rating of 280mJ and a current-drive rating of 9.5A making it suitable for applications requiring high current. It is also designed with a residual drain-source breakdown-voltage rating of 250V making it suitable for high-voltage applications. Finally, its low on-resistance combined with its low threshold voltage make it an ideal choice for current-switching applications.

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