SUM90330E-GE3 Discrete Semiconductor Products

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The SUM90330E-GE3 is a single N−Channel Enhancement Mode Field Effect Transistor (FET). It is developed for high−speed switching applications and is packaged in the smaller size 2×2mm 8pin Exposed Pad Quad Flat Non−leaded (EPQFN) package. This FET is suitable for DC−DC converters and high−side load switch applications.

The SUM90330E-GE3 is composed of a semiconductor material with a barrier between a source and a drain. In FETs, the gate electrode is separated from the source and drain electrodes by a shielding oxide layer. The gate electrode controls the behavior of the source and drain contact by regulating the current flow between them. When a voltage is applied to the gate, it forms an electric field in the oxide layer, enabling or disabling the current flow between the source and drain. This mechanism is the core operation principle of FETs.

The SUM90330E-GE3 offers the advantages of low operating voltage (3.3 to 18V), low on−resistance (7mΩ) and low gate charge (4nC). It is also capable of offering a continuous current of 12A and low thermal resistance. The exposure pad is electrically connected to the source so that it can reduce the thermal resistance of the overall layout by providing additional heat dissipation.

The SUM90330E-GE3 can be used in a wide range of applications such as DC−DC converters, high−side load switches, motor drives, energy meters, and other power management systems. It is compatible with switched mode power supplies (SMPS) and is well suited for applications requiring low EMI (electromagnetic interference). The FET can also be used in automotive power systems.

The SUM90330E-GE3 utilizes an enhancement mode operation, which makes it attractive for applications requiring high frequency switching. As the FET does not require an additional gate voltage to enable the current flow between the source and drain, it simplifies the power management design. With its low input capacitance and fast switching speeds, this FET is perfect for applications where a low power signal needs to be amplified or switched rapidly.

The SUM90330E-GE3 is an ideal choice for high−speed switching applications because of its low operating voltage and on−resistance, fast switching speeds, low gate charge, and low thermal resistance. It also offers a wide range of features such as its compatibility with SMPS, high EMI performance, and compact package size, making it an attractive choice for applications in multiple industries.

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