Allicdata Part #: | IXFT74N20-ND |
Manufacturer Part#: |
IXFT74N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 74A TO-268 |
More Detail: | N-Channel 200V 74A (Tc) 360W (Tc) Surface Mount TO... |
DataSheet: | IXFT74N20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 74A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFT74N20 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It has a temperature range of -55°C to 175°C and is most suited for extreme temperature applications and automotive applications. The IXFT74N20 is designed for low leakage, high speed switching, and high voltage tolerance.
The IXFT74N20 is used in a wide range of applications such as low voltage applications (under 30V), high current applications, switch driver applications and load switching. The IXFT74N20 can also be used as a power switch in DC/DC, AC/DC and DC/AC converters to provide isolation, power selection, and/or battery protection. It is also suitable as a digital switch to drive IR emitters, LEDs and relays.
The IXFT74N20 works on the principle of MOSFET. MOSFET stands for metal oxide semiconductor field effect transistor. It is a type of field-effect transistor (FET) that is built by combining a metal oxide and a semiconductor to create a device which has a high impedance to low current but a low impedance to high current. In most cases the semiconductor part of the MOSFET is a silicon based material, but other semiconductor materials such as gallium arsenide can be used as well.
A MOSFET is an active device that uses an electric field to control current flow. It consists of four regions: the drain, gate, source and body. The gate is an insulated gate that is insulated from the other three regions by an insulating layer. The drain and source are the two output terminals and the body is the substrate material which the other elements are built upon. When an appropriate voltage is applied to the gate the electric field between the gate and substrate will change, effectively inducing a change in the resistance between the drain and source. As a result, the current passing between the two terminals is varied.
The IXFT74N20 is an N-Channel MOSFET, meaning that the transistor operates by having a voltage applied to the gate insulation and as a result, the current flows from the source to the drain. The voltage required to switch on the IXFT74N20 is 0 to 5V and it can be used with voltages up to 30V. It also has a maximum drain current of 3A and a maximum drain-to-source voltage of 70V.
The IXFT74N20 is a highly reliable component that is suitable for many different applications. It is used in power switch applications such as DC/DC and AC/DC converters, load switching applications, low-voltage switching applications, and digital switch applications. It is also suitable for automotive applications and extreme temperature ranges. Due to its high speed switching and low leakage characteristics, the IXFT
The specific data is subject to PDF, and the above content is for reference
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