IRFI9620GPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFI9620GPBF is a typical enhancement-mode, field-effect transistor obtained from International Rectifier. This device is designed to improve the efficiency, performance and operation of digital power systems by providing efficient power handling. IRFI9620GPBF is based on gallium arsenide field-effect transistor (GaAsFET) technology, which provides high voltage and flexibility for many applications. The IRFI9620GPBF is commonly used for power switch applications where high performance, fast switching, and continuous drain current are important. It is also suitable for various polarities and multiple layers of power supply voltage.

The IRFI9620GPBF is a depletion-mode, N- channel, enhancement-mode, field-effect transistor developed for low-voltage operation. It is configured in a dual, common source configuration. The main distinction between the two versions is the source-to-drain relationship. The common source amplifier provides a high current gain and low voltage drop in the off state that makes it useful for applications where fast switching is desired. Conversely, the common drain version provides a higher voltage gain, making it suitable for applications where high voltage operation is important.

The IRFI9620GPBF operates in the enhancement-mode and is rated for voltage (VGF) up to 20V and current (Id) up to 60A with a breakdown voltage of 20V. It also features a maximum junction temperature of 175°C and a very low on-resistance of less than 25 mOhms. The IRFI9620GPBF is also rated for a high total gate charge of 56 nC.

The IRFI9620GPBF offers a wide range of operating frequencies plus very low gate capacitance. Its operating current is highly stable over a broad range of temperature and power supply voltages. Use of the IRFI9620GPBF also helps realize low output noise, improved frequency characteristics, and excellent thermal characteristics.

The IRFI9620GPBF is tailored for applications such as DC/DC converters, motor controls, and switching power supplies. Its application field includes communication systems, automotive systems, and computer systems. The common applications of the IRFI9620GPBF are switching power supplies, inverter circuits, UPS, and cellular phones.

The IRFI9620GPBF is an important component of digital power systems in terms of functionality and features. It works based on the theory of a field effect, which is the electrical field created within an insulator to control electrical current and prevent unwanted leakage current within the device. This feature helps to protect against electrostatic discharge, which is a potential problem when dealing with high/low voltage signals. When voltage is applied to the gate of the IRFI9620GPBF, it creates an electric field at the interface between the source and drain regions.

This electric field creates a channel between them where current can flow. As current flows through the device, the electric field would decrease or collapse, and this decreases the resistance across the channel and consequently turns the component on. The IRFI9620GPBF utilizes its power capability to handle transient performance without switching on/off too quickly. This allows for excellent control and accuracy of the drain current.

In conclusion, the IRFI9620GPBF is a state-of-the-art enhancement-mode field-effect transistor used for digital power system design. It can provide reliable performance in applications like switching power supplies, inverter circuits, UPS, and cellular phones. The IRFI9620GPBF’s ability to provide efficient power handling and its ability to handle high voltages and high current in a very low-voltage operation makes it a favored component for digital power system design.

The specific data is subject to PDF, and the above content is for reference